A 2.4-GHz Fully-Integrated GaAs pHEMT Front-End Receiver for WLAN and Bluetooth Applications

Abstract

This paper describes a 2.4-GHz fully-integrated front-end receiver including a single-pole triple-throw (SP3T) switch and a low-noise amplifier (LNA) with bypass function, which was fabricated in a 0.25 μm GaAs pHEMT process. An asymmetrical SP3T switch architecture is incorporated to enable the receiver to operate in four modes. The exploration of impedance and voltage gain behavior of the proposed LNA help to establish the matching network and alleviate the trade-off between noise figure (NF) and gain performance. In LNA high gain mode, the implemented front-end receiver shows 1.7 dB of NF and 6dBm of input third-order intercept point (IIP3) with 20 dB of power gain drawing 11 mA of current from 5 V power supply at 2.4 GHz. All input and output return loss had exceeded 10 dB with fully on-chip impedance matching network. In bypass mode, the measured insertion loss of typically 7.5 dB is achieved.

An MMIC LNA for Millimeter-Wave Radar and 5G Applications with GaN-on-SiC Technology

“…RF signals enter from the RFin port and exit from the RFout port. [2,36,37]. A 5V supply voltage, provided in pulse mode by the RIGOL DP832A, is used for the drain bias.…”

“…This adjusts the gate bias voltage to obtain the same quiescent current. The small signal performance of the MMIC LNA is measured using the Keysight PNA Vector Network Analyzer N547B, which operates within the n257-n258 [2,36,37]. A 5V supply voltage, provided in pulse mode by the RIGOL DP832A, is used for the drain bias.…”

“…To prevent interference between different industries that use spectrum resources, the International Telecommunication Union has established international radio regulations. Currently, low-frequency (600 MHz–3 GHz) resources are mainly allocated from the first-generation mobile communications system (1G) to the fourth-generation mobile communications system (4G) [ 1 , 2 ]. The most significant change in the communication generation from 2G to 5G is the increase in data transmission speeds.…”

“…Figure 11 illustrates a set of equipment block diagrams for small signals, including S-parameters and NF[2,36,37]. A 5V supply voltage, provided in pulse mode by the RIGOL DP832A, is used for the drain bias.…”