2023
DOI: 10.3390/s23146611
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An MMIC LNA for Millimeter-Wave Radar and 5G Applications with GaN-on-SiC Technology

Abstract: This paper presents a monolithic microwave integrated circuit (MMIC) low noise amplifier (LNA) that is compatible with n257 (26.5–29.5 GHz) and n258 (24.25–27.5 GHz) frequency bands for fifth-generation mobile communications system (5G) and millimeter-wave radar. The total circuit size of the LNA is 2.5 × 1.5 mm2. To guarantee a trade-off between noise figure (NF) and small signal gain, the transmission lines are connected to the source of gallium nitride (GaN)-on-SiC high electron mobility transistors (HEMT) … Show more

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Cited by 3 publications
(3 citation statements)
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“…In essence, this contribution represents an advance because it offers a satisfying and rare combination of desirable characteristics. For example, a large bandwidth (1)(2)(3)(4)(5)(6)(7)(8)(9)(10)(11)(12)(13)(14)(15)(16), gain greater than 30 dB, common-mode rejection ratio (CMRR) approximately equal to 40 dB, and noise levels approximately equal to 1.0 dB. Here, the noise figure in differential mode measured "on jig" and using the OMMIC foundry is less than 1.4 dB.…”
Section: Introductionmentioning
confidence: 91%
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“…In essence, this contribution represents an advance because it offers a satisfying and rare combination of desirable characteristics. For example, a large bandwidth (1)(2)(3)(4)(5)(6)(7)(8)(9)(10)(11)(12)(13)(14)(15)(16), gain greater than 30 dB, common-mode rejection ratio (CMRR) approximately equal to 40 dB, and noise levels approximately equal to 1.0 dB. Here, the noise figure in differential mode measured "on jig" and using the OMMIC foundry is less than 1.4 dB.…”
Section: Introductionmentioning
confidence: 91%
“…In this sense, we will use the FOM proposed in [32], given by ( 5). This FOM relates the gainbandwidth product (GBP) to the noise figure and to the DC power consumption (see (6)).…”
Section: Single-ended Vs Differential Lnamentioning
confidence: 99%
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