Fully integrated low phase-noise VCOs with on-chip MEMS inductors

Park, Eun-Chul; Choi, Yun‐Seok; Yoon, Jun‐Bo; Hong, Songcheol; Yoon, Euisik

doi:10.1109/tmtt.2002.806510

Cited by 68 publications

(6 citation statements)

References 30 publications

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“…It has been realized in many reports that MEMS suspended inductors are used to replace traditional IC on-chip inductors to improve circuit performance and to reduce the power consumption of the circuit. For example, they can be used in amplifiers to achieve high gain, wide bandwidth, and low noise [12]; the oscillation circuits with a MEMS suspended inductor can be used in voltage controlled oscillators to significantly reduce oscillator noise [13]; MEMS inductors can be used on conductive chips of radar to improve radar cross section [14]. However, MEMS inductors tend to be affected by various kinds of mechanical shock during fabrication, shipping, and operation.…”

Section: Introductionmentioning

confidence: 99%

Analysis of the Failure and Performance Variation Mechanism of MEMS Suspended Inductors with Auxiliary Pillars under High-g Shock

2020

Micromachines

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Microelectromechanical systems (MEMS) suspended inductors have excellent radio frequency (RF) performance and they are compatible with integrated circuit (IC). They will be shocked during manufacturing, transportation, and operation; in some applications, the shock amplitude can be as high as tens of thousands of gravitational acceleration (g, 9.8 m/s2). High-g shock will lead to the inductor deformation which affects its performance or even failure of the inductor structure. However, few studies have been carried out on the inductors under high-g shock. In this study, a kind of MEMS suspended inductor with excellent RF and mechanical performance is designed and fabricated. The failure and performance variation mechanism of the inductor under high-g shock is analyzed by measuring and comparing the performance measurement results and the π model parameters extraction results of the inductors before and after air cannon shock test. The results show that the increase of energy loss caused by substrate parasitic effect and the properties variation of the coil material affected by high-g shock are the main reasons for the decrease of RF performance parameters, and the critical stress exceeding the interlayer adhesion is the main reason for the failure of the inductor.

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Section: Introductionmentioning

confidence: 99%

Analysis of the Failure and Performance Variation Mechanism of MEMS Suspended Inductors with Auxiliary Pillars under High-g Shock

2020

Micromachines

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“…In many RF-IC modules, spiral inductors are essential elements and their performances are important to RF circuits such as RF chokes, mixer matching networks, voltage controlled oscillators (VCOs), power converters, and various passive filters. [1][2][3][4][5][6][7][8][9] In particular, because most monolithic RF-ICs have been used for wireless communications, the performance of the inductor is of interest at 1-5 GHz, and much research has been focused on realizing a high-Q inductor in this frequency range as a monolithic structure. 10,11) The performance of the inductor is estimated using the quality factor (Q).…”

Section: Introductionmentioning

confidence: 99%

High-Q trenched spiral inductors and low-loss low pass filters using through silicon via processes

Yook

Kim

2014

Jpn. J. Appl. Phys.

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In this study, a high-aspect-ratio metal is made by the standard through silicon via (TSV) process, and high-Q trenched spiral inductors can be realized by using the technology. The fabricated inductor has 60 µm signal height and its Q factor is more than 30 at 2 GHz. As a result, the Q factor of the trench inductor depends on signal spacing rather than signal width. The peak Q factor is maximized when the signal spacing is increased. To demonstrate the process technology, a 0.9 GHz low pass filter (LPF), which is can be used for the RF front-end of the GSM band, is designed and fabricated using the inductor. The realized LPF has very low insertion loss of only 0.355 dB at the pass band, and this value is an improvement of more than 28% compared with the normal LPF.

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“…INTRODUCTION Micro-inductors are widely used in radio frequency (RF) and microwave integrated circuits (IC) due to the ease of fabrication and their compatibility to IC processing technologies, which, however, suffer from low inductance per area and relatively low quality Q factors. [1][2][3][4] Soft magnetic films (SMFs) show great potential in enhancing the inductance and Q factor. It is required that the SMFs should have a well-defined in-plane uniaxial magnetic anisotropy (UMA) to reach a high ferromagnetic resonance frequency f FMR .…”

mentioning

confidence: 99%

Quasi magnetic isotropy and microwave performance of FeCoB multilayer laminated by uniaxial anisotropic layers

Zhang

et al. 2014

Journal of Applied Physics

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A Fe0.7Co0.3-B multilayer was laminated by three Fe0.7Co0.3-B ferromagnetic sublayers prepared by composition gradient sputtering. Three Fe0.7Co0.3-B ferromagnetic sublayers have their individual directions of uniaxial magnetic anisotropy, and the easy magnetic axis of neighboring sublayer successively rotates 60° in the film plane. It is exciting that a quasi magnetic isotropy was achieved in the designed multilayer with a quasi-isotropic hysteresis loop and quasi-isotorpic ferromagnetic resonance around 3.7 GHz. This omnidirectional multilayer is promising for the application in inductors since the 100% hard-axis excitation is achieved for any shaped inductors.

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Fully integrated low phase-noise VCOs with on-chip MEMS inductors

Cited by 68 publications

References 30 publications

Analysis of the Failure and Performance Variation Mechanism of MEMS Suspended Inductors with Auxiliary Pillars under High-g Shock

Analysis of the Failure and Performance Variation Mechanism of MEMS Suspended Inductors with Auxiliary Pillars under High-g Shock

High-Q trenched spiral inductors and low-loss low pass filters using through silicon via processes

Quasi magnetic isotropy and microwave performance of FeCoB multilayer laminated by uniaxial anisotropic layers

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