FTIR analysis of a-SiCN:H films deposited by PECVD

Microwave PECVD Silicon Carbonitride Thin Films: A FTIR and Ellipsoporosimetry Study

“…This reveals a competitive formation of CH and NH bonds at high temperature. The position of the SiH band progressively shifts toward higher wavenumbers (from 2 125 to 2 180 cm −1 ) when the NH 3 dilution increases. This shift occurs both at 300 and 500 K and is due to changes of the Si near environment, with carbon atoms being progressively replaced by nitrogen atoms In agreement to previous studies, the shoulder in the range of 1 000–1 100 cm −1 can be attributed to SiOSi stretching or SiCH 2 Si wagging. The main band, centered at ≈950 cm −1 , is more intense for films deposited at 500 K than for those deposited at 300 K, thus revealing higher SiC and SiN bond concentrations in the former case.…”

Amorphous silicon carbonitride diaphragm for environmental-cell transmission electron microscope fabricated by low-energy ion beam induced chemical vapor deposition

“…In addition, absorption bands of the Si-N stretching mode at $950 cm À1 , C@N stretching mode at $1700 cm À1 , and C"N stretching mode at $2200 cm À1 were confirmed. The assignment of these absorption bands was based on literature findings [5,[13][14][15]. The nitrogen concentration ratios of the films deposited at 300 and 600 eV were 8.9% and 20.5%, respectively, as confirmed by XPS.…”

Study of Cu diffusion behavior in carbon rich SiCN:H films deposited from trimethylphenylsilane

“…FTIR absorbance spectra were normalized on the film thickness in order to get information on the bonding density in the volume of the film. The particular absorption bands were identified according to the literature data [13][14][15][16][17][18] and summarized in Table 1.…”