2012
DOI: 10.1063/1.4753869
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Front-side interconnected large area concentrator cells for compact concentrator modules

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Cited by 5 publications
(7 citation statements)
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“…Therefore, interconnection schemes were investigated aiming for higher packaging factors in the dense array. The investigated options are front contacted solar cells, 176 back contacted cells (metal wrap around 177 or metal wrap through 178 ), monolithic interconnected modules (MIMs), [179][180][181] and interconnection by shingling cells. 182 In Fig.…”
Section: Active Heat Distribution With Dense Arraysmentioning
confidence: 99%
“…Therefore, interconnection schemes were investigated aiming for higher packaging factors in the dense array. The investigated options are front contacted solar cells, 176 back contacted cells (metal wrap around 177 or metal wrap through 178 ), monolithic interconnected modules (MIMs), [179][180][181] and interconnection by shingling cells. 182 In Fig.…”
Section: Active Heat Distribution With Dense Arraysmentioning
confidence: 99%
“…Existing literature regarding the application of a homogenizer in a solar dish system includes measurements of a dense array CPV receiver with a homogenizer [8], general theoretical analysis [16], and idealized optical simulations [17]. Recently, the influence of mutual shading of neighboring dishes in a dense field on homogenizer performance has been analyzed using an idealized situation [18].…”
Section: Introductionmentioning
confidence: 99%
“…This is especially the case for parabolic dish systems. However, in principle, for a given inhomogeneous flux distribution, it is possible to design a receiver with an optimized geometry and electrical interconnection scheme for maximal power output [7][8][9][10]. Additionally, it is possible to optimize the shape (and configuration) of the reflector(s) to generate a homogeneous flux profile [11,12].…”
Section: Introductionmentioning
confidence: 99%
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“…One of the challenges is that both emitter and base contacts must be on the same side of the wafer, which is not straightforward for the state‐of‐the‐art InGaP/InGaAs/Ge structure. Wiesenfarth et al proposed front‐contacted InGaP/InGaAs/Ge cells that use a back‐surface lateral conductive layer to minimize the bulk Ge contribution to resistive losses due to the large dimensions of the cells 8 . However, these cells were interconnected using the conventional wirebonding technique (i.e., nonmonolithic assembly).…”
Section: Introductionmentioning
confidence: 99%