Frequency limitation of a high-efficiency class E tuned RF power amplifier due to a shunt capacitance

Mediano, Arturo; Molina, P.

doi:10.1109/mwsym.1999.779494

Cited by 27 publications

(12 citation statements)

References 3 publications

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“…The class-E topology in Figure 8 was initially simulated using a single-valued inductor (which is calculated according to Ref. 11) and after that using the oneresonator topology (calculated using Equations ( 5)- (7) with γ = 0.5). Table 3 shows the parameter values for the selected frequencies.…”

Section: Simulation Of Fdic-class-e Using Sdd Modelmentioning

confidence: 99%

Computer‐aided design methodology for inductive compensated microwave class‐E power amplifier

Cumana

Vrba

2021

Int J RF Mic Comp-Aid Eng

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This article presents a simulation-based analysis to first evaluate the impact of excessive transistor output capacitance on class-E power amplifiers and to second show how inductive compensation can be used to recover optimum class-E operating conditions. As a starting point, the finite-feed inductor in a parallel-circuit topology is replaced by a frequency-dependent inductor, which in turn can be substituted by a network composed of a series inductor and additional subharmonic resonators. This complex lumped-element network is then replaced by a generalized transmission line equivalent topology, suitable for microwaves. Calculation of the transmission line impedances and electrical lengths of the proposed generalized network is shown in detail and a design procedure for this modified class-E is provided. The analysis presented here is further extended by using a simplified large-signal model for the employed GaN HEMT device, which allows evaluating the effects of non-ideal switching as well as of capacitance voltage-dependency and feedback capacitance. The analysis is validated by simulation and design of a test board. Measurements of the test board showed a drain efficiency of 80.3%, power-added efficiency of 76.3% and output power of 40.1 dBm at 1.96 GHz, demonstrating the validity of the proposed approach.

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Section: Simulation Of Fdic-class-e Using Sdd Modelmentioning

confidence: 99%

Computer‐aided design methodology for inductive compensated microwave class‐E power amplifier

Cumana

Vrba

2021

Int J RF Mic Comp-Aid Eng

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“…The switch parallel capacitance , which must be at least as large as the transistor output capacitance, is determined by the output power, dc voltage, and operating frequency. This restriction on the size of the transistor can limit the performance of class-E amplifiers [18]. Class-F tunings, however, can, in principle, utilize a transistor with any output capacitance provided that it is properly resonated out at the appropriate frequencies.…”

Section: Comparison and Motivation For E/fmentioning

confidence: 99%

“…As will be shown in Section III, these differences in the waveforms should provide advantages in efficiency and saturated gain. Additionally, the class-E approach has limited tolerance for large transistor output capacitance [18], providing an identifiable limit to its high-frequency performance.…”

mentioning

confidence: 99%

The class-E/F family of ZVS switching amplifiers

Kee

Aoki²,

Hajimiri

et al. 2003

IEEE Trans. Microwave Theory Techn.

231

138

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Abstract-A new family of switching amplifiers, each member having some of the features of both class E and inverse F, is introduced. These class-E/F amplifiers have class-E features such as incorporation of the transistor parasitic capacitance into the circuit, exact truly switching time-domain solutions, and allowance for zero-voltage-switching operation. Additionally, some number of harmonics may be tuned in the fashion of inverse class F in order to achieve more desirable voltage and current waveforms for improved performance. Operational waveforms for several implementations are presented, and efficiency estimates are compared to class-E.

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“…Several switching amplifier topologies such as class-E and class-F have demonstrated high performance at RF frequencies [1,2], but even these classes have fundamental performance limitations [3,4]. Class-E amplifiers have highly peaked voltage and current waveforms, and can tolerate only a limited transistor output capacitance.…”

Section: Outfitmentioning

confidence: 99%

High-Efficiency, Class-E RF Power Amplifiers

Rutledge¹

2001

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Frequency limitation of a high-efficiency class E tuned RF power amplifier due to a shunt capacitance

Cited by 27 publications

References 3 publications

Computer‐aided design methodology for inductive compensated microwave class‐E power amplifier

Computer‐aided design methodology for inductive compensated microwave class‐E power amplifier

The class-E/F family of ZVS switching amplifiers

High-Efficiency, Class-E RF Power Amplifiers

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