Free-to-bound recombination in near stoichiometric Cu2ZnSnS4single crystals

Identifying the Real Minority Carrier Lifetime in Nonideal Semiconductors: A Case Study of Kesterite Materials

“…Values of σ d are reported as weakly temperature dependent or following a power law dependence σ d ∝ T α with −2.8 < α < 1 for various materials. [1,3,32,[49][50][51] A weak temperature dependence of σ d is also commonly found in defect analysis from capacitance spectroscopy. [52][53][54][55] For CIGSe, we find τ ∝ T…”

Engineering Solar Cell Absorbers by Exploring the Band Alignment and Defect Disparity: The Case of Cu‐ and Ag‐Based Kesterite Compounds

“…[14][15][16][17][18][19][20] In Cu 2 ZnSnS 4 (similarly Cu 2 ZnSnSe 4 ), it was found that the Cu Zn antisite defects have a low formation energy and high concentration due to the small size and chemical difference between Cu and Zn, [ 15,19 ] making the synthesized samples always show p-type conductivity. [21][22][23][24][25] When forming a p-n junction with the n-type CdS (buffer layer), the p-type Cu 2 ZnSnS 4 (absorber layer) cannot have an effective p-to-n type inversion near the p-n junction interface because high concentration of Cu Zn will form at the interface and pin the Fermi level at the middle of the band gap.…”

Crystal growth of Cu2ZnSnS4 solar cell absorber by chemical vapor transport with I2

“…Compositional analysis was not reported, but structure refinement from X-Ray Diffraction (XRD) revealed the compound to crystallize in a tetragonal lattice with a = b = 5.427 Å and c = 10.848 Å [20]. Nitsche's CVT results have only now been outclassed in terms of crystal thickness by Levcenko et al [21] who succeeded in growing black blade shape crystals up to 5 mm x 1.5 mm x 1 mm.…”