Free-standing single-crystalline chemically vapor deposited diamond films

Abstract

Free-standing chemically vapor deposited (CVD) single-crystalline diamond films have been fabricated by a sequence of processes including high energy ion implantation, microwave plasma enhanced chemical vapor deposition, and the final separation of the diamond epilayer from the substrate by heating in oxygen. The homoepitaxial diamond film separated from the substrate is about 15 μm thick. It is flat and transparent, and exhibits a sharp diamond Raman peak without nondiamond background signals. This process is promising for mass production of large-area single-crystalline diamonds with the size restricted only by the availability of one large initial diamond substrate. The initial substrate is expensive but can be used repetitively to produce a large number of single-crystalline CVD diamond films.

Diamond Nanowires: Fabrication, Structure, Properties and Applications

“…The fabrication of single-crystal diamond nanowires began from the highpressure high-temperature (HPHT) type Ib-diamond substrate, which was implanted with carbon ions [31]. A homoepitaxial boron-doped p-type diamond was grown on the substrate by a microwave plasma chemical vapor deposition (MPCVD) apparatus at 930°C.…”

Diamond Nanowires: Fabrication, Structure, Properties, and Applications

“…The fabrication of singlecrystal diamond nanowires began from the high-pressure high-temperature (HPHT) type Ib diamond substrate, which was impregnated with carbon ions. [57] A homoepitaxial borondoped p-type diamond was grown on the substrate by microwave plasma chemical vapor deposition (MPCVD) at 930 8C. After growth, the diamond epilayer was annealed at 900 8C for 3 h in an ultrahigh vacuum (UHV) chamber (base pressure 10 À7 Pa).…”

Suspended Single‐Crystal Diamond Nanowires for High‐Performance Nanoelectromechanical Switches

“…A previous report showed that a sharp freestanding SCD structure could be achieved by the focused-ion-beam technique with the assistance of ion implantation for photonic applications. [11][12][13] However, the resulting structures do not satisfy the practical requirements for NEMS, especially for NEM switches.…”

“…[ 13 ] A homoepitaxial boron-doped p-type diamond was grown on the substrate by a microwave plasma chemical vapor deposition (MPCVD) apparatus at 930 ° C, providing the electrical conductivity for the devices. After growth, the diamond epilayer was annealed at 900 ° C for 3 h in a UHV chamber (base pressure 10 − 7 Pa).…”