Fracture toughness and crack growth phenomena of plasma-etched single crystal silicon

Fitzgerald, Alissa M.; Dauskardt, Reinhold H.; Kenny, Thomas W.

doi:10.1016/s0924-4247(99)00383-0

Cited by 80 publications

(39 citation statements)

References 7 publications

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“…This agreement provides additional evidence that supports our hypothesis. Estimates of the fracture toughness purely based on the (111) surface energy lead to values of K Ic that are approximately 30% smaller (K Ic 0:76 MPa m p ) [12,29]. Notably, this value does not fall into the range of experimental measurements [12].…”

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confidence: 90%

Threshold Crack Speed Controls Dynamical Fracture of Silicon Single Crystals

et al. 2007

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Fracture experiments of single silicon crystals reveal that after the critical fracture load is reached, the crack speed jumps from zero to 2 km= sec, indicating that crack motion at lower speeds is forbidden. This contradicts classical continuum fracture theories predicting a continuously increasing crack speed with increasing load. Here we show that this threshold crack speed may be due to a localized phase transformation of the silicon lattice from 6-membered rings to a 5-7 double ring at the crack tip.

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confidence: 90%

Threshold Crack Speed Controls Dynamical Fracture of Silicon Single Crystals

et al. 2007

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“…Nevertheless, some researchers have estimated fracture toughness on micromachined single-crystalline and polycrystalline silicon specimens. 18,19 All of these methods are invariably time consuming, and so it is difficult to generate significant data for statistical purposes. Apart from the difficulties in measuring valid fracture toughness values, their application as design criteria for microparts is not evident, either.…”

Section: Introductionmentioning

confidence: 99%

Strength and fracture of Si micropillars: A new scanning electron microscopy-based micro-compression test

et al. 2007

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A novel method for in situ scanning electron microscope (SEM) micro-compression tests is presented. The direct SEM observation during the instrumented compression testing allows for very efficient positioning and assessment of the failure mechanism. Compression tests on micromachined Si pillars with volumes down to 2 m 3 are performed inside the SEM, and the results demonstrate the potential of the method. In situ observation shows that small diameter pillars tend to buckle while larger ones tend to crack before failure. Compressive strength increases with decreasing pillar diameter and reaches almost 9 GPa for submicrometer diameter pillars. This result is in agreement with earlier bending experiments on Si. Difficulties associated with precise strain measurements are discussed.

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“…A reference to the expected values for the critical stress intensity factor is provided by single crystal silicon [18][19][20][21], which can be as low as 0.82 MPa√m for (111) planes [19], and as high as 1.22 MPa√m according to [18]. More specifically, the critical stress intensity factor of single crystal silicon of (100), (110) and (111) was reported as 0.95 MPa√m, 0.90 MPa√m and 0.83 MPa√m respectively [19].…”

Section: Problem Statement and Scientific Relevancementioning

confidence: 99%

Influence of Grain Structure and Doping on the Deformation and Fracture of Polycrystalline Silicon for MEMS and NEMS

Chasiotis¹

2012

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Public reporting burden for this collection of information is estimated to average 1 hour per response, including the time for reviewing instructions, searching existing data sources, gathering and maintaining the data needed, and completing and reviewing this collection of information. SPONSOR/MONITOR'S REPORT Multifunctional Materials and NUMBER(S) Microsystems DISTRIBUTION / AVAILABILITY STATEMENTApproved for public release SUPPLEMENTARY NOTES ABSTRACTThis research program investigated the effect of microstructure and doping on the effective mode I critical stress intensity factor, K IC,eff , and the tensile strength of 1-μm thick films comprised of columnar or laminated polysilicon doped with different concentrations of Phosphorus. The K IC,eff was 0.8-1.2 MPa√m and differed by as much as 25% for specimens with specific grain size and doping concentration. This data scatter was attributed to differences in the local material details at the location of the crack tip. The K IC,eff of columnar polysilicon was generally higher than laminated polysilicon, but the latter demonstrated smaller variability in K IC,eff , due to the averaging effect of the laminate structure. The tensile strengths of undoped columnar and laminated polysilicon were 1.28±0.06 GPa and 2.28±0.15 GPa, respectively. While high doping impacted the strength of the former, it had negligible effect on the strength of the latter. It was concluded that microstructural control of failure initiation is compromised by large defects that are due to post processing, and that laminated polysilicon films do improve on the consistency and magnitude of film strength. It was also shown that the Weibull parameters derived from the larger specimens could predict the characteristic strengths of ~200 times smaller specimens for different film structures and doping conditions, and vice versa.

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Fracture toughness and crack growth phenomena of plasma-etched single crystal silicon

Cited by 80 publications

References 7 publications

Threshold Crack Speed Controls Dynamical Fracture of Silicon Single Crystals

Threshold Crack Speed Controls Dynamical Fracture of Silicon Single Crystals

Strength and fracture of Si micropillars: A new scanning electron microscopy-based micro-compression test

Influence of Grain Structure and Doping on the Deformation and Fracture of Polycrystalline Silicon for MEMS and NEMS

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