No abstract

The fracture strength of silicon nanowires grown on a [111] silicon substrate by the vapor−liquid−solid process was measured. The nanowires, with diameters between 100 and 200 nm and a typical length of 2 µm, were subjected to bending tests using an atomic force microscopy setup inside a scanning electron microscope. The average strength calculated from the maximum nanowire deflection before fracture was around 12 GPa, which is 6% of the Young's modulus of silicon along the nanowire direction. This value is close to the theoretical fracture strength, which indicates that surface or volume defects, if present, play only a minor role in fracture initiation.

A novel method for in situ scanning electron microscope (SEM) micro-compression tests is presented. The direct SEM observation during the instrumented compression testing allows for very efficient positioning and assessment of the failure mechanism. Compression tests on micromachined Si pillars with volumes down to 2 m 3 are performed inside the SEM, and the results demonstrate the potential of the method. In situ observation shows that small diameter pillars tend to buckle while larger ones tend to crack before failure. Compressive strength increases with decreasing pillar diameter and reaches almost 9 GPa for submicrometer diameter pillars. This result is in agreement with earlier bending experiments on Si. Difficulties associated with precise strain measurements are discussed.