Four-terminal-gauge quasi-circular and square diaphragm silicon pressure sensors

Utilizing large hall offset voltage for conversion free 4H-SiC strain sensor

“…1, in which the current was supplied at the rectangular-shaped electrodes, while the output voltage was measured at the square-shaped electrodes. According to the square-type model for a fourterminal silicon-based pressure sensor [20][21][22], the sensor consists of four symmetric resistors R13, R23, R24, and R14 (Fig 1(d)). By supplying a constant current flowing between terminals 1 and 2, in the stress-free state the circuit is in equilibrium (i.e.…”

“…The piezoresistive effect, represented by the gauge factor (GF) [11] or piezoresistive coefficients of twoterminal SiC devices, has been utilized for mechanical sensing applications with relatively high GFs [12][13][14][15][16][17][18][19]. There are numerous studies on the 3C-SiC and n-type 4H-SiC based four-terminal strain sensors with a relatively high sensitivity and good reproducibility [4,[20][21][22]. However, the strain induced effect and strain sensing in four-terminal p-type 4H-SiC devices have not been investigated yet.…”

A large pseudo-Hall effect in n-type 3C-SiC(1 0 0) and its dependence on crystallographic orientation for stress sensing applications

“…The dependence of the offset voltage of Hall devices (or four terminal devices) on applied stress can be utilized in stress sensing applications, thanks to the imperfections in the fabrication of Hall devices which generate this offset. Rather than taking it a reliability issue, this effect called pseudo-Hall effect can be useful for designing micro-mechanical sensors [1][2][3][4]. Compared to the two terminal diffused resistors, the pseudo-Hall effect offers many advantages which includes the elimination of Wheatstone bridge from the measuring circuitry, thermal stability and the small device size [5][6][7][8].…”

Dissolution slowness surfaces of cubic crystals

“…Most silicon-integrated sensors are piezoresistive sensors [14,15,[21][22][23][24][32][33][34][35][36][37] which have been developed to measure forces, pressures, displacements and accelerations. Many silicon sensors consist of four semiconductor strain gauges in the form of a Wheatstone bridge [22-24, 36, 37].…”

“…Many silicon sensors consist of four semiconductor strain gauges in the form of a Wheatstone bridge [22-24, 36, 37]. But recently new structures have been studied, such as pressure sensors composed of a single element with four terminals arranged like a Hall element [15,[32][33][34][35]. Designs of 0022-2461/91 $03.00 + .…”