Utilizing large hall offset voltage for conversion free 4H-SiC strain sensor

Abstract

This work presents a conversion free p-type 4H silicon carbide (4H-SiC) four-terminal strain sensor utilizing a large Hall offset voltage in a symmetric fourterminal configuration. Upon the application of mechanical strain, a high sensitivity of 209 mV/A/ppm was obtained. The strain sensor also exhibited good repeatability and linearity with a significantly large offset voltage in the induced strain ranging from 0 to 334ppm. Coupled these performances with the excellent mechanical strength, electrical conductivity, thermal stability, and chemical inertness of the SiC material, the proposed 4H-SiC strain sensor is promising for stress/strain monitoring for harsh operating environments with high signal-to-noise ratio.