Forming Freeform Source Shapes by Utilizing Particle Swarm Optimization to Enhance Resolution in Extreme UV Nanolithography

Kuo, Hung-Fei; Wu, Wei-Chen

doi:10.1109/tnano.2015.2393916

Cited by 8 publications

(6 citation statements)

References 49 publications

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“…The CD variation reduction and wire length increase tradeoff have been studied as an OPC technique [41]. Source mask optimisation technology offers the ability to optimise mask patterns in conjunction with illumination patterns, resulting in a free‐form, composite, or parameterised geometry for the source along with a simultaneously optimised mask pattern including elaborate assist features integrated with main feature corrections [9, 42, 43]. Wafer topography aware OPC has also been adopted [44].…”

Section: Resolution Enhancement Techniquementioning

confidence: 99%

“…After reaching the resolution limit with UV source lithography (193 nm immersion), a leap has been made in reducing the wavelength of the illumination. Several studies are ongoing to establish a stable light source for the extreme UV lithography [7–10]. Laser produced plasma (LPP) system is used to produce short wavelength light by utilising a high‐power laser to create high‐energy plasma that emits light inside a vacuum chamber.…”

Section: Illumination Opticsmentioning

confidence: 99%

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Lithography technology for advanced devices and introduction to integrated CAD analysis for hotspot detection

Vikram

Agarwal

2017

IET Circuits, Devices & Systems

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Optical projection lithography has been the workhorse of the integrate circuit (IC) manufacturing industry to transfer the computer-aided design (CAD) to semiconducting material wafers. The resolution limit of the 193 nm wavelength lithography which was initially targeted for the 90 nm design rule has been further extended to realise ∼10-20 nm devices with ingenious interventions. The three-dimensional fin-shaped field-effect transistor device structure now realise the <20 nm design rule still using 193 nm projection lithography as the widely accepted solution. The extreme ultraviolet wavelength source systems are still in development and testing phases with some recent success reported, but still falling short of supporting volume production requirements. This study reviews the current trends in lithography and the associated resolution enhancement techniques with brief introduction to an integrated CAD analysis for hotspot detection.

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Section: Resolution Enhancement Techniquementioning

confidence: 99%

Section: Illumination Opticsmentioning

confidence: 99%

Lithography technology for advanced devices and introduction to integrated CAD analysis for hotspot detection

Vikram

Agarwal

2017

IET Circuits, Devices & Systems

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“…Several studies are ongoing to establish a stable light source for the Extreme UV lithography [7][8][9][10]. Laser Produced Plasma (LPP) system is used to produce short wavelength light by utilizing a high power laser to create high energy plasma that emits light inside a vacuum chamber.…”

Section: Extreme Ultra Violet Lithographymentioning

confidence: 99%

“…The critical dimension (CD) variation reduction and wire length increase tradeoff have been studied as an OPC technique [41]. Source Mask Optimization (SMO) technology offers the ability to optimize mask patterns in conjunction with illumination patterns, resulting in a free-form, composite or parameterized geometry for the source along with a simultaneously optimized mask pattern including elaborate assist features integrated with main feature corrections [42][43][44]. Wafer topography aware OPC has also been adopted [45].…”

Section: B Model Based Opcmentioning

confidence: 99%

Critical Review of Current Trends in ASIC Writing and Layout Analysis

Vikram¹,

Agarwal

2016

JSTS:Journal of Semiconductor Technology and Science

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Abstract-Electrical Designs for Application SpecificIntegrated Circuits (ASIC) has undergone a change recently with the advent of the sub-wavelength lithography. The optical projection with 193 nm wavelength has been further extended with the use of immersion and other techniques. The competing trends for printing smaller design features have been discussed in this paper with the discussion of the electrical layout analysis to find unfriendly design features. The early knowledge of the unfriendly design features allows remedial actions in time for better yield on the wafer. There are existing standard design qualification criteria being used in the design and fabrication community, but they seem to be insufficient to guarantee defect free designs. This paper proposes an integrated approach for screening the layout with multiple aspects: layout geometry based, graphical analysis and process model based verification. The results have been discussed with few example design features from the 28nm design layout.

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“…Heuristic algorithms, such as the genetic algorithm (GA) [26], [27], particle-swarm optimization (PSO) [28], [29], and differential evolution [30], are commonly applied to handle optimization challenges because they are free of complex optimization structures and tedious gradient calculations that search for the global suboptimal solution to the merit function. Moreover, it is convenient to simplify the complex challenges; for instance, the optimization of the lithographic source can be simplified to the calculation of the optimal value of the merit function [31].…”

Section: Introductionmentioning

confidence: 99%

Inverse Lithography Source Optimization via Particle Swarm Optimization and Genetic Combined Algorithm

et al. 2023

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Inverse lithography technologies (ILTs) are critical for improving the imaging performance of lithography in advanced technology nodes. Pixel-based source optimization (SO), as an efficient part of ILTs, can be implemented via heuristic approaches to achieve high-performance lithographic imaging. In this paper, a SO approach based on a combination of the particle-swarm optimization and genetic algorithms (PSO-GA) is proposed to determine the optimal intensity distribution of the source via iterations. The pixelated source can be decoded into the optimized variables of the merit functions in the SO model. The proposed PSO-GA algorithm, as a highefficiency hybrid algorithm, can transform the discrete SO problem into the optimal search solution for the merit function, thereby inversely enhancing the lithographic-imaging performance. In the forward-imaging model in the lithography, the extraction of the mask's effective diffraction spectrum is implemented to calculate the layout of resist patterns. The simulation results highlight the superior performance of the proposed approach in achieving pixelated SO over the traditional GA and PSO algorithm in terms of convergence capacity.

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Forming Freeform Source Shapes by Utilizing Particle Swarm Optimization to Enhance Resolution in Extreme UV Nanolithography

Cited by 8 publications

References 49 publications

Lithography technology for advanced devices and introduction to integrated CAD analysis for hotspot detection

Lithography technology for advanced devices and introduction to integrated CAD analysis for hotspot detection

Critical Review of Current Trends in ASIC Writing and Layout Analysis

Inverse Lithography Source Optimization via Particle Swarm Optimization and Genetic Combined Algorithm

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