Lithography technology for advanced devices and introduction to integrated CAD analysis for hotspot detection

Abstract

Optical projection lithography has been the workhorse of the integrate circuit (IC) manufacturing industry to transfer the computer-aided design (CAD) to semiconducting material wafers. The resolution limit of the 193 nm wavelength lithography which was initially targeted for the 90 nm design rule has been further extended to realise ∼10-20 nm devices with ingenious interventions. The three-dimensional fin-shaped field-effect transistor device structure now realise the <20 nm design rule still using 193 nm projection lithography as the widely accepted solution. The extreme ultraviolet wavelength source systems are still in development and testing phases with some recent success reported, but still falling short of supporting volume production requirements. This study reviews the current trends in lithography and the associated resolution enhancement techniques with brief introduction to an integrated CAD analysis for hotspot detection.

Design and Implementation of Dynamic Time History Analysis in Building Structure CAD

“…For the CAD technology of building structure, many research teams at home and abroad have already conducted in-depth research. Vikram A [1] reviewed the current trends in lithography and related resolution enhancement techniques, and briefly introduced the integrated CAD analysis of hotspot detection. Yu R [2] proposed a performance-based anti-explosion design method.…”