Forming delocalized intermediate states with realistic quantum dots

Reid, William M.; Driscoll, Tobin A.; Doty, Matthew F.

doi:10.1063/1.3691113

Cited by 8 publications

(2 citation statements)

References 15 publications

(21 reference statements)

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“…Recently, Reid et al showed for realistic QDs that the formation of a subband strongly depends on the QD uniformity [7]. Furthermore, the built-in potential in the intrinsic region of the solar cell unavoidably lifts the approximate degeneracy between the QD electron eigenenergies.…”

Section: Introductionmentioning

confidence: 99%

Towards intermediate-band formation in solar cells with AlGaInAs quantum dots

Kremling

Schneider

Braun

et al. 2012

2012 38th IEEE Photovoltaic Specialists Conference

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We focus on the integration of composition tailored AlGaInAs quantum dots (QDs) in an AlGaAs p-i-n structure for solar cell applications. These QDs can absorb a wide range of the solar spectrum from the red visible to the near infrared spectral range. Different samples were grown and investigated in order to study the influence of doping, number of QD layers, QD arrangement and QD strain on the device performance. We anticipate that by suitable choice of QD composition, shape and barrier thickness electronic coupling between QD layers can be established to generate an intermediate band. Based on our result we propose a route towards intermediate band solar cells with these quaternary QDs.

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Section: Introductionmentioning

confidence: 99%

Towards intermediate-band formation in solar cells with AlGaInAs quantum dots

Kremling

Schneider

Braun

et al. 2012

2012 38th IEEE Photovoltaic Specialists Conference

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“…Understanding the carrier escape mechanism is crucial to further improving the device performance. 42,43 Sellers et al 42 have evaluated the carrier escape mechanism in InAs/GaAs QDSC by using photocurrent measurements under sub-bandgap illumination. The 1.17-eV photon source and 0.8-eV photo source were chosen, and their fluencies were varied to reveal the fundamental carrier escaping principle.…”

Section: Carrier Escape Nature and Electric Field Effectmentioning

confidence: 99%

Recent progress on quantum dot solar cells: a review

2016

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Abstract. Semiconductor quantum dots (QDs) have a potential to increase the power conversion efficiency in photovoltaic operation because of the enhancement of photoexcitation. Recent advances in self-assembled QD solar cells (QDSCs) and colloidal QDSCs are reviewed, with a focus on understanding carrier dynamics. For intermediate-band solar cells using selfassembled QDs, suppression of a reduction of open circuit voltage presents challenges for further efficiency improvement. This reduction mechanism is discussed based on recent reports. In QD sensitized cells and QD heterojunction cells using colloidal QDs well-controlled heterointerface and surface passivation are key issues for enhancement of photovoltaic performances. The improved performances of colloidal QDSCs are presented. © The Authors. Published by SPIE under a Creative Commons Attribution 3.0 Unported License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.

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