Formation of ultrathin oxide films on silicon in RF oxygen plasma

Abstract

The oxidation kinetics of Si in oxygen rf plasma in a planar reactor is investigated. It is found that the dependence of the oxide layer thickness on oxidation time is characterizedbyarapid initial region described by the Mott-Cabrera law, followed by a linear region. The influence of glow discharge parameters on the oxidation process is investigated. It is concluded that the active oxidizing particle is elemental oxygen.Die Oxidationskinetik von Si im HF-Sauerstoffplasma eines planaren Reaktors wird untersucht. Es wird festgestellt, daB die Abhiingigkeit der Oxidschichtdicke von der Oxidationszeit durch einen steilen Anfangsbereioh, der nach dem Gesetz von Mott-Cabrera beschrieben wird, und einem nachfolgenden linearen Bereioh charakterisiert wird. Der EinfluB der Entladungsparameter auf den Oxidationsvorgang wird untersucht. Es wird gefolgert, daB das aktive Oxidationsteilchen atomarer Sauerstoff ist.

Tailoring LaAlO3/SrTiO3 Interface Metallicity by Oxygen Surface Adsorbates

“…were driven to the sample surface by a small electrical bias. Besides removing organic contaminants, oxygen plasma’s effects in surface oxidation − and hydroxylation − are also well known. Due to the low ion energies, oxygen plasma reacted only with the surface atoms.…”

Polarity‐ and Site‐Controlled Metal Organic Vapor Phase Epitaxy of 3D‐GaN on Si(111)

“…While the Si‐surface of sample A showed a clear hydrophobic character, sample B exhibited hydrophilic surface properties. This leads to the conclusion, that the Si‐surface is SiH x terminated after the last HF‐treatment and a transition to a SiO x termination or layer occurred due to the oxygen plasma treatment . No melt‐back etching of GaN could be observed and a constant reflectivity change during the AlN growth was monitored by in situ interferometry for both samples.…”

“…The operation parameters of the O 2 -plasma were 25 W generator power, room temperature and 20 mbar pressure. The treatment with HF, [29][30][31][32][33][34] H 2 O, [35] O 2 -plasma [36,37] as well as exposing the samples to air [30,38] in-between the steps can change the surface termination. To achieve a constant surface termination prior to epitaxy the above steps were consecutively executed, minimizing and defining the exposure time of the samples to air.…”

“…This leads to the conclusion, that the Si-surface is SiH x terminated [32,34] after the last HF-treatment and a transition to a SiO x termination or layer occurred due to the oxygen plasma treatment. [36,37] No melt-back etching of GaN could be observed and a constant reflectivity change during the AlN growth was monitored by in situ interferometry for both samples. Therefore, conform AlN growth over the whole wafer surface can be stated.…”

Microwave‐Discharge Plasma Oxidation of Silicon in a Cusp Magnetic Field

“…It was shown that the slope of the log-log plots exceeded 2, similar to the present results. In addition, a smaller activation energy of plasma oxidation (3,6,11) than those of thermal oxidation (9,12) and plasma anodization (13) of GaAs suggests that oxygen atoms enhance plasma oxidation. An exchange p h e n o m e n o n between migrating oxygen and its counterpart in the oxide observed by the authors ( 14) may be another evidence for oxygen atoms migration in plasma oxi- From these results, it is thought that oxygen atoms are responsible for the oxidation enhancement in the plasma oxidation, although it is difficult to determine whether oxygen atoms or atom ions are migrating.…”