Formation of titanium silicide thin films on Si(100) substrate by RF plasma CVD

Understanding substrate-driven growth mechanism of copper silicide nanoforms and their applications

“…Deposition at high substrate temperature around 800°C has yielded irregular and very small structures which may be due to re-evaporation of Cu atoms due to high kinetic energy acquired from the substrate. This is similar to findings reported for other metal silicides [10–15]. During in-situ deposition at optimum high substrate temperatures, the deposited ad-atoms have sufficient energy to find equilibrium positions leading to well-defined features.…”

“…Though a lot of work has been reported on metal silicides, the Cu/Si system has not been investigated as thoroughly as other systems such as Ag/Si, Au/Si, Ti/Si and Pt/Si etc [9][10][11][12][13][14][15]. Ordered 2-dimensional (2D) Cu nanostructures on Si(111) have been reported for very low thicknesses by Zang et al [16].…”

Temperature Dependence of Oxygen Diffusion and Crystal Structure for Thermally Oxidized Titanium Thin Films

“…This is considered to be due to the formation of titanium silicide. 25,26) It is reported from a laser irradiation experiment that TiSi and TiSi 2 are formed below and above 500 C, respectively. 26) The depth profiles of Ti and O in the film are different from those at 300 C in Fig.…”

An approach to prepare high-purity TiSi2 for clean utilization of Ti-bearing blast furnace slag

“…28 Due to its low electrical resistivity (approximately 13-16 μΩ cm), high-temperature stability, and good corrosion resistance, TiSi 2 has been widely employed to manufacture microelectronic devices, such as gate electrode wiring, connector products, Schottky barriers, and ohmic contact materials. 29 Currently, the methods to prepare TiSi 2 include chemical vapor deposition, 30 self-propagating high-temperature synthesis, 31 and mechanical alloying. 32 These synthesis methods used high-purity Ti and Si as raw materials to synthesize TiSi 2 with a stoichiometric molar ratio of 1 : 2 (Ti : Si), but the use of high-purity Ti and Si makes these processes expensive.…”