Formation of thin films of NiSi: Metastable structure, diffusion mechanisms in intermetallic compounds

d’Heurle, F. M.; Petersson, C. S.; Baglin, J. E. E.; Placa, S. J. La; Wong, C. Y.

doi:10.1063/1.333021

Cited by 248 publications

(87 citation statements)

References 32 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…These observed results correspond to what is known from literature. 20 Adding Pd changes the reaction sequence significantly, as can be inferred from Figs. 1(b)-1(d) showing the in situ XRD measurements on 45 nm Ni(Pd) films containing 5%, 10%, and 15% of Pd, respectively.…”

Section: Resultssupporting

confidence: 48%

On the nucleation of PdSi and NiSi2 during the ternary Ni(Pd)/Si(100) reaction

Schrauwen

Demeulemeester

Kumar

et al. 2013

Journal of Applied Physics

View full text Add to dashboard Cite

During the solid phase reaction of a Ni(Pd) alloy with Si(100), phase separation of binary Ni-and Pd-silicides occurs. The PdSi monosilicide nucleates at temperatures significantly below the widely accepted nucleation temperature of the binary system. The decrease in nucleation temperature originates from the presence of the isomorphous NiSi, lowering the interface energy for PdSi nucleation. Despite the mutual solubility of NiSi and PdSi, the two binaries coexist in a temperature window of 100 C. Only above 700 C a Ni 1-x Pd x Si solid solution is formed, which in turn postpones the NiSi 2 formation to a higher temperature due to entropy of mixing. Our findings highlight the overall importance of the interface energy for nucleation in ternary systems. V C 2013 AIP Publishing LLC.

show abstract

Section: Resultssupporting

confidence: 48%

On the nucleation of PdSi and NiSi2 during the ternary Ni(Pd)/Si(100) reaction

Schrauwen

Demeulemeester

Kumar

et al. 2013

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…The growth of the first two phases is reported to be diffusion controlled, with Ni as dominant diffusing species [17,18]. NiSi 2 on the other hand is a phase of high resistivity that nucleates at temperatures above 800 ○ C [10,19].…”

Section: Resultsmentioning

confidence: 99%

“…Moreover, the large difference in mobility between Si and the RE element leads to pinhole formation, which is detrimental for dedicated electrical contacts [9]. Ni silicides (Ni 2 Si and NiSi) on the other hand grow via a diffusion controlled growth mechanism in which the metal is the DDS [10,11]. As such, the combination of both mechanisms in one system makes ternary Ni-RE silicide thin film growth appealing to study fundamental processes in thin film solid phase reactions.…”

Section: Introductionmentioning

confidence: 99%

In situ study of the growth properties of Ni-rare earth silicides for interlayer and alloy systems on Si(100)

Demeulemeester¹,

Knaepen²,

Smeets³

et al. 2012

Journal of Applied Physics

View full text Add to dashboard Cite

We report on the solid-phase reaction of thin Ni-rare earth films on a Si(100) substrate, for a variety of rare earth (RE) elements (Y, Gd, Dy and Er). Both interlayer (Ni/RE/) and alloy (Ni-RE/) configurations were studied. The phase sequence during reaction was revealed using real-time x-ray diffraction whereas the elemental diffusion and growth kinetics were examined by real-time Rutherford backscattering spectrometry. All RE elements studied exert a similar influence on the solid phase reaction. Independent of the RE element or its initial distribution a ternary Ni 2 Si 2 RE phase forms, which ends up at the surface after NiSi growth. With respect to growth kinetics, the RE metal addition hampers the Ni diffusion process even for low concentrations of 2.5 at. %, resulting in the simultaneous growth of Ni 2 Si and NiSi. Moreover, the formation of Ni 2 Si 2 RE during NiSi growth alters the Ni diffusion mechanism in the interlayer causing a sudden acceleration of the Ni silicide growth. *

show abstract

“…For the non-cubic phases, such as TiSi 2 and NiSi, an epitaxial match between film and substrate is less obvious. Based on X-ray diffraction measurements in Bragg-Brentano geometry, it was concluded that these materials exhibit a random texture [7]. Indeed, lots of peaks, belonging to different planes, show up, indicating that not one single specific plane is parallel to the substrate.…”

Section: Texture Of Silicidesmentioning

confidence: 99%