Formation of thin DLC films on SiO2/Si substrate using FCVAD technique

Bootkul, D.; Intarasiri, S.; Aramwit, C.; Tippawan, U.; Yu, L.D.

doi:10.1016/j.nimb.2013.02.037

Cited by 3 publications

(4 citation statements)

References 12 publications

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“…This evolution is mainly due to the higher acceleration strength of bombarding C ion, which is determined by the bias voltage during the FCVAD, leading to the subplantation of incident ions and local densification under the surface of the DLC films. 35,36 In addition, the effects of bias voltage applied to the substrates also are reflected in other aspects, including surface roughness and the thickness varying of the DLC films. Optical and atomic force microscopy images show that all of the DLC films deposited under different bias voltages are generally uniform and smooth, as shown in Figure 2d,e and Figure S3.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

“…In other words, the bonding structure of DLC would gradually evolve to a more and more diamond-like structure (less and less graphitic-like structure) as the substrate negative bias increases. This evolution is mainly due to the higher acceleration strength of bombarding C ion, which is determined by the bias voltage during the FCVAD, leading to the subplantation of incident ions and local densification under the surface of the DLC films. , …”

Section: Resultsmentioning

confidence: 99%

“…The DLC films' properties and quality were found to be very much dependent on the FCVAD parameters and conditions. 17 Especially, DLC films are prone to detach from substrates due to residual stress and poor adhesion. 18 Here, we prepared high-quality DLC films on SiO 2 /Si substrates with varied C−C bonding configurations via FCVAD method and explored the possibility of obtaining better characteristics for graphene supported by DLC dielectrics.…”

Section: ■ Introductionmentioning

confidence: 99%

“…On the other hand, the complete control over DLC properties via single preparation technique such as filtered cathodic vacuum arc deposition (FCVAD) is still a challenge. The DLC films’ properties and quality were found to be very much dependent on the FCVAD parameters and conditions . Especially, DLC films are prone to detach from substrates due to residual stress and poor adhesion …”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Synthesis of Diamond-like Carbon as a Dielectric Platform for Graphene Field Effect Transistors

Luo

Yuan

Yang

et al. 2021

ACS Appl. Nano Mater.

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The platform for supporting two-dimensional (2D) materials such as graphene has a critical influence on the electronic properties of the materials it supports. Here we report on the filtered cathodic vacuum arc deposition (FCVAD) of atomically flat diamond-like carbon (DLC) films with varied C sp 3 /sp 2 content ratio by modulating the parameters of substrate bias voltage, then used as a dielectric platform for supporting graphene. By doing this, an all-carbon DLC−graphene heterostructure would be formed. Through characterizing this heterostructure and constructing graphene field effect transistors (FETs) on DLC, it was shown that graphene on DLC platforms had less doping from the substrate and improved FET carrier mobility compared with that of graphene on SiO 2 /Si substrate. Moreover, the graphene on different DLC platforms exhibited an increased FET mobility (up to ∼7032 and 5558 cm −2 V −1 s −1 for hole and electron, respectively) with the increase of C sp 3 /sp 2 bond fraction in DLC which could be tuned by the negative bias voltage applied to the deposited substrates in the FCVAD synthesis of DLC here.

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Section: ■ Results and Discussionmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%