Formation of silicon nitride layers by nitrogen ion irradiation of silicon biased to a high voltage in an electron cyclotron resonance microwave plasma

Abstract

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High mobility, bottom gate, nanocrystalline silicon thin film transistors incorporating a nitrogenated incubation layer

“…Ensinger et al [16] demonstrated that a 25 nm thick silicon nitride layer can be produced on crystalline silicon by exposure to a dense nitrogen plasma produced by an electron cyclotron resonance (ECR) remote plasma source [16]. To achieve the conversion of such a thick layer of crystalline silicon to silicon nitride, a À50 kV bias was applied to the crystalline silicon to raise the nitrogen ion bombardment energy.…”

Dynamics of the ion beam induced nitridation of silicon

“…13,26 The formation of buried nitride layers has been studied for the high-energy nitrogen ion implantation ͑у50 keV/N ϩ ion͒ of Si. 2,10,24,[27][28][29] Only few articles are published for bombardment using low-energy nitrogen ions ͑0.1-10 keV/ N ϩ ion͒. 2,23,30,31 The ion beam nitridation of Si with N 2 ϩ ions in the 100-1000 eV energy range has been investigated for the near-normal bombardment using predominantly x-ray photoelectron spectroscopy ͑XPS͒.…”