1999
DOI: 10.1080/095008399177381
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Formation of self-aligned carbon nanotube films by surface decomposition of silicon carbide

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Cited by 115 publications
(105 citation statements)
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“…Oxygen has been shown to exist at the surface of the SiC where the sp 2 carbon anchors onto the crystal. 14,29 The evidence presented here shows a direct interaction between the graphitic roots of a carbon nanotube and an ␣-alumina support. On the basis of these findings, it cannot be exclusively decided if carbon preferentially binds at oxygen sites.…”
Section: Resultsmentioning
confidence: 99%
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“…Oxygen has been shown to exist at the surface of the SiC where the sp 2 carbon anchors onto the crystal. 14,29 The evidence presented here shows a direct interaction between the graphitic roots of a carbon nanotube and an ␣-alumina support. On the basis of these findings, it cannot be exclusively decided if carbon preferentially binds at oxygen sites.…”
Section: Resultsmentioning
confidence: 99%
“…However, the argument for oxygen is compelling because oxygen is known to enhance graphitization and activate catalysts in CNT formation. 10,14,30 Furthermore, as we have shown, the use of non-oxide supports results in the formation of non-uniform structures. The need to replenish oxygen at the substrate surface would offer an additional explanation for the role of H 2 O in the supergrowth of CNTs.…”
Section: Resultsmentioning
confidence: 99%
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“…In the growth of graphene, in general, the temperature of SiC is quickly increased to the growth temperature, typically, about several minutes to ~1400ºC (Gamara et al, 2008). On the other hand, in the CNT growth by surface decomposition, the heating rate is typically 1-15ºC/min (Kusunoki et al 1999(Kusunoki et al , 2002 and much slower than that in the graphene growth. This low heating rate might be necessary to enhance the migration of carbon atoms, assembling and leading to formation of carbon nanocaps.…”
Section: Mechanism Of Chirality Alignment To Zigzag-typementioning
confidence: 99%
“…In early studies, Kusunoki et al proposed a chemical reaction process for CNT growth by surface decomposition of SiC as follows (Kusunoki et al 1999):…”
Section: Effect Of Ambient Oxygen Gasmentioning
confidence: 99%