Carbon Nanotubes - Synthesis, Characterization, Applications 2011
DOI: 10.5772/17253
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Initial Growth Process of Carbon Nanotubes in Surface Decomposition of SiC

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Cited by 6 publications
(11 citation statements)
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“…In the case of higher amount of SiO 2 , we detect also a small amount of SiC (peak at 100.3 eV) in the film (point 2) (Ref. [13]).…”
Section: Xps Studies: Point Xps Study Of Irradiated Area Of Diameter mentioning
confidence: 76%
See 1 more Smart Citation
“…In the case of higher amount of SiO 2 , we detect also a small amount of SiC (peak at 100.3 eV) in the film (point 2) (Ref. [13]).…”
Section: Xps Studies: Point Xps Study Of Irradiated Area Of Diameter mentioning
confidence: 76%
“…The presence of silicon in Si-O and SiO 2 groups was detected from the observed peaks in the Si2p spectra at 101.8 eV and at 103.4 eV ( Fig. 6 a and b), respectively [13]. The quantity of Si-O and SiO 2 varies at the different positions on the surface.…”
Section: Xps Studies: Point Xps Study Of Irradiated Area Of Diameter mentioning
confidence: 82%
“…Thus, the CNSs XANES spectra are very similar to those of graphite and almost identical with that of HOPG (High Oriented Pirolytic Graphite) measured at the magic angle (54.7˚), where no polarization dependence of π-type states occurs. Carbon K-edge x-ray absorption spectra of CNSs as observed in Figure 3, can be divided into three regions [18,21,26,37,38]. The first region is located at 285.5 eV with the peak named A.…”
Section: Xanes Spectra Analysismentioning
confidence: 99%
“…As a consequence of this specific dimensional particularity, every nanostructure synthesized has to be characterizing for fully mastering its proprieties and by the way, handle its applications [18][19][20][21][22]. Another specificity of nanostructures is their complex and heavy synthesis processes compared to other materials used in different domains of technology and their different methods of synthesizing [23][24][25].…”
Section: Introductionmentioning
confidence: 99%
“…Αντίστοιχα, ο καθαρισμός του προϊόντος μετά την παραλαβή του για την απομάκρυνση των καταλυτικών υπολειμμάτων είναι μια διεργασία που έπεται της σύνθεσης, αλλά πρέπει αντίστοιχα να ενσωματωθεί σε ένα σύστημα συνεχούς παραγωγής. Τέλος, επιχειρήθηκε η ανάπτυξη μονοδιάστατων νανοδομών άνθρακα σε νανοδομημένο καρβίδιο πυριτίου [113] και με τις δύο μεθόδους, χωρίς τη χρήση καταλύτη για την περίπτωση του υποστηριζόμενου καταλύτη, με στόχο να διερευνηθεί εάν το SiC δρα καταλυτικά από τη φύση του. Τα αποτελέσματα έδειξαν ότι η χρήση καταλύτη είναι απαραίτητη για την ανάπτυξη CNTs, τα οποία ανιχνεύτηκαν μόνο στην περίπτωση του αιωρούμενο καταλύτη, διαμορφώνοντας συσπειρωμένες δομές ινώδους μορφής.…”
Section: τελική αποτίμηση συστημάτων Cvdunclassified