Formation of mechanically strong low-k film using supercritical fluid dry technology

Ogawa, Shinya; Nasuno, T.; Egami, Miki; Nakashima, Akira

doi:10.1109/iitc.2002.1014939

Cited by 6 publications

(3 citation statements)

References 3 publications

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“…Moreover, porous low-k materials such as methylsilses-quioxane ͑MSQ͒ are required in the construction of advanced 65 and 45 nm node LSI devices. 1 However, the extremely low Young's modulus values of these materials results in significant numbers of defects such as peeling or cracking, [2][3][4] preventing the use of these materials in the construction of LSI devices. Additionally, some of the defects induced during CMP had been previously unreported.…”

mentioning

confidence: 99%

Stress Corrosion Cracking of Cu Interconnects during CMP with a Cu/Porous Low-k Structure

Kodera¹,

Uekusa²,

Nagano³

et al. 2005

J. Electrochem. Soc.

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Porous low-k materials are required in the construction of 45 nm node large-scale integrated devices. However, the extremely low Young's modulus values of these materials results in a high number of previously unreported defects. A porous low-k film stacked with a dense low-k film showed pronounced cracking in its Cu wiring, which was concentrated in isolated lines 0.18 m in width and was accelerated with longer chemical-mechanical polishing ͑CMP͒ times. Denser lines showed less cracking and the single structure of a dense low-k film showed no cracking. We hypothesized that this cracking might be categorized as stress corrosion cracking ͑SCC͒. Accordingly, we investigated the relation between stress and corrosion in certain kinds of slurry. We have also researched the effects on corrosion of temperature and various metals. In all of the slurry that we tested, tensile stress increased corrosion current in Cu samples. Furthermore, both finite element method analysis of stress during CMP and measurements of friction on the Cu/low-k surface by scanning probe microscopy indicated concentration of stress on low-k materials, especially at the edges of isolated wiring. Thus, we concluded that stress enhances corrosion during CMP and that there was a high possibility of SCC.

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confidence: 99%

Stress Corrosion Cracking of Cu Interconnects during CMP with a Cu/Porous Low-k Structure

Kodera¹,

Uekusa²,

Nagano³

et al. 2005

J. Electrochem. Soc.

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“…8 SCCO 2 is also a promising cleaning technique for high aspect ratio vias and trenches and one study reported that SCCO 2 also increased the mechanical strength of porous materials. 9 In a previous paper, we reported the ability of SCCO 2 to dissolve low molecular weight and loosely bonded species in films prepared by plasma-enhanced CVD. 10 Supercritical CO 2 has been used effectively for the extraction and isolation of organic and inorganic compounds, including removal of hazardous organic waste from contaminated soil, 11,12 fractionation of natural oils, [13][14][15][16] and extraction of biomolecules, 17 metal ions, [18][19][20][21] and polymerization catalysts.…”

Section: Introductionmentioning

confidence: 99%

Supercritical CO₂extraction of porogen phase: An alternative route to nanoporous dielectrics

et al. 2004

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We present a supercritical CO 2 (SCCO 2 ) process for the preparation of nanoporous organosilicate thin films for ultralow dielectric constant materials. The porous structure was generated by SCCO 2 extraction of a sacrificial poly(propylene glycol) (PPG) from a nanohybrid film, where the nanoscopic domains of PPG porogen are entrapped within the crosslinked poly(methylsilsesquioxane) (PMSSQ) matrix. As a comparison, porous structures generated by both the usual thermal decomposition (at approximately 450°C) and by a SCCO 2 process for 25 and 55 wt% porogen loadings were evaluated. It is found that the SCCO 2 process is effective in removing the porogen phase at relatively low temperatures (<200°C) through diffusion of the supercritical fluid into the phase-separated nanohybrids and selective extraction of the porogen phase. Pore morphologies generated from the two methods are compared from representative three-dimensional (3D) images built from small-angle x-ray scattering (SAXS) data.

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“…T. [10]. Besides, it is an operative method to extract moisture from nanoscale structures, such as porous dielectric material and carbon nanotube [11], [12]. The SCCO 2 fluids holds liquidlike property that allows it to carry the H 2 O molecules [12], [13].…”

Section: Introductionmentioning

confidence: 99%

Low-Temperature Passivation of Amorphous-Silicon Thin-Film Transistors With Supercritical Fluids

Tsai

Liu

Chang

et al. 2007

IEEE Electron Device Lett.

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In this letter, supercritical CO 2 (SCCO 2 ) fluids technology is employed for the first time to effectively passivate the defect states in hydrogenated amorphous-silicon thin-film transistors (a-Si:H TFTs) at low temperature (150 • C). With the high transport and diffusion properties of SCCO 2 fluids, it is proposed to act as a transporter in delivering the H 2 O molecules into the amorphous-silicon film and repairing defect states by the H 2 O molecules. In addition, the propyl alcohol is used as the surfactant between nonpolar-SCCO 2 fluids and polar-H 2 O molecules for mingling H 2 O molecules uniformly with the SCCO 2 fluids. After the treatment of SCCO 2 fluids mixed with water and propyl alcohol, the a-Si:H TFT exhibited superior transfer characteristics and lower threshold voltage. The improvement in electrical characteristics could be verified by the significant reduction of density of states in the mobility gap of amorphous-silicon. Index Terms-Amorphous-silicon thin-film transistors (a-Si:H TFTs), density of states (DOSs), supercritical CO 2 (SCCO 2 ) fluids technology.

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Formation of mechanically strong low-k film using supercritical fluid dry technology

Cited by 6 publications

References 3 publications

Stress Corrosion Cracking of Cu Interconnects during CMP with a Cu/Porous Low-k Structure

Stress Corrosion Cracking of Cu Interconnects during CMP with a Cu/Porous Low-k Structure

Supercritical CO₂extraction of porogen phase: An alternative route to nanoporous dielectrics

Low-Temperature Passivation of Amorphous-Silicon Thin-Film Transistors With Supercritical Fluids

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Formation of mechanically strong low-k film using supercritical fluid dry technology

Cited by 6 publications

References 3 publications

Stress Corrosion Cracking of Cu Interconnects during CMP with a Cu/Porous Low-k Structure

Stress Corrosion Cracking of Cu Interconnects during CMP with a Cu/Porous Low-k Structure

Supercritical CO2extraction of porogen phase: An alternative route to nanoporous dielectrics

Low-Temperature Passivation of Amorphous-Silicon Thin-Film Transistors With Supercritical Fluids

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Product

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Supercritical CO₂extraction of porogen phase: An alternative route to nanoporous dielectrics