Formation of Low-Resistivity Nickel Germanide Using Atomic Layer Deposited Nickel Thin Film

Ahn, Hyun Jun; Moon, Jun Il; Seo, Youngkyun; Lee, Tae In; Kim, Choong‐Ki; Hwang, Wan Sik; Yu, Hyun‐Yong; Cho, Byung Jin

doi:10.1109/ted.2017.2694456

Cited by 14 publications

(6 citation statements)

References 18 publications

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“…This result is well in line with the existing literature on Ni x Ge y films prepared by annealing Ni films on Ge substrates. The lowest values reported for Ni x Ge y vary between 17 and 24 μΩ cm. ,, The resistivity of Ni x Ge y is phase-dependent; the Ni 2 Ge and Ni 5 Ge 3 phases exhibit a slightly higher resistivity than the NiGe phase . The 1:1 stoichiometry is typically obtained by high-temperature annealing of Ni or NiO films on Ge substrates, that is, only when there is excess Ge available.…”

Section: Resultsmentioning

confidence: 99%

“…The ALD route to NiGe has previously been realized only by heating ALD Ni or NiO films on Ge to temperatures above 400 °C. 16,17 Diamine adducts of metal(II) halides are known compounds 18,19 but have only recently been studied for their volatility and established as suitable ALD precursors. NiCl 2 (tmpda) has been used to deposit Ni 3 Sn 2 and Ni 3 N thin films by ALD.…”

Section: ■ Introductionmentioning

confidence: 99%

“…Ni x Ge y films are typically prepared by annealing physical vapor-deposited (PVD) Ni metal films on Ge substrates. − Atomic layer deposition (ALD) provides superior accuracy and conformality to the PVD techniques and thus enables scaling down with three-dimensional (3D) designs and sub-10 nm thin films. − There are no reports of processes involving direct ALD of metal germanides. The ALD route to NiGe has previously been realized only by heating ALD Ni or NiO films on Ge to temperatures above 400 °C. , …”

Section: Introductionmentioning

confidence: 99%

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Nickel Germanide Thin Films by Atomic Layer Deposition

et al. 2019

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This work presents preparation of nickel germanide (Ni 2 Ge) thin films by atomic layer deposition (ALD). The films were grown using NiCl 2 (tmpda) (tmpda = N,N,N′,N′,-tetramethyl-1,3-propanediamine) and tributylgermanium hydride serving as a new, efficient reducing agent. This is the first time ALD Ni x Ge y films are prepared directly upon the combination of two precursors and without any annealing treatment. Ni x Ge y is an important contact material for enabling Ge-based transistors and thus circumventing the scaling issues related to current microelectronics. The Ni 2 Ge process was examined at low temperatures of 160−200 °C. Self-limiting, saturative growth with a high growth rate of 0.91 Å/cycle was observed at 180 °C. The films were thoroughly analyzed in terms of morphology, crystallinity, composition, and resistivity. The Ni 2 Ge films were pure, with the sum of contaminants being less than 1 at. %. Owing to their high purity, the films exhibited low resistivity, suggesting suitability for contact applications.

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Section: Resultsmentioning

confidence: 99%

Section: ■ Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Nickel Germanide Thin Films by Atomic Layer Deposition

et al. 2019

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“…For example, the metal-semiconductor (M-S) contact resistivity (ρ c ) may depend on the semiconductor material. p-Ge [100], [103], [116], [117], [123]- [138]. (For guidance, lines are drawn at ρ c = 10 −8 -cm 2 , to represent a typical number for a decent contact.)…”

Section: Discussion: Effects Of Contact Resistivitymentioning

confidence: 99%

Comprehensive n- and pMOSFET Channel Material Benchmarking and Analysis of CMOS Performance Metrics Considering Quantum Transport and Carrier Scattering Effects

Kim

Avci

Young

2020

IEEE J. Electron Devices Soc.

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Comprehensive channel material benchmarking for n-and pMOS are performed considering effects of quantum transport and carrier scattering. Various channel material options (Si, InAs, In 0.7 Ga 0.3 As, In 0.53 Ga 0.47 As, GaAs, and Ge for nMOS, Si and Ge for pMOS) are covered using hybrid simulation of quantum ballistic transport and semi-classical Monte Carlo. Current-voltage characteristics and performance metrics such as the capacitance and effective drive current (I eff) are explored considering device parasitic components. For low power operation, III-V nMOS may deliver good performance while Ge n-and pMOS with different source/drain tip designs may give performance advantage over Si from low power to high performance operations. CMOS benchmarking results for I eff , capacitance, and switching energy vs. delay (for gate capacitance loading vs. interconnect wire capacitance loading) are also presented for various homogeneous and hybrid combinations of n-and pMOS (Si CMOS, III-V hybrid CMOS, Ge hybrid CMOS, and Ge CMOS). Finally, sensitivity analysis is performed for I eff on the parasitic resistance (R SD) and contact resistivity (ρ c). Novel channel materials may relax the R SD and ρ c requirements to match the I eff performance of Si reference. Comprehensive literature reviews of experimental ρ c 's of novel materials are also presented to discuss the effect of material-dependent R SD .

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“…Therefore, the S/D contact resistancewhich is a major factor in the total resistance of highly scaled electronic devicesbecomes a key issue that hinders device performance . Many types of contacts for electronic nanodevices have been reported that reduce the thickness of the depletion region at the semiconductor surface via dopant segregation and form alloy metal which has a low resistivity (e.g., silicide and germanide for Si and Ge, respectively, and alloy contacts for III–V compound semiconductors). − However, currently, there has been little progress for the sub-10 nm regime. The physical limitations of the contacts have deeply challenged further scaling of the electronic nanodevices. , Therefore, new and better concepts, techniques, and approaches for contact Ohmic formation should be studied to improve the performance of these devices and continue development in electronic technologies.…”

Section: Introductionmentioning

confidence: 99%

Novel Conductive Filament Metal–Interlayer–Semiconductor Contact Structure for Ultralow Contact Resistance Achievement

Kim

Park

et al. 2018

ACS Appl. Mater. Interfaces

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In the post-Moore era, it is well-known that contact resistance has been a critical issue in determining the performance of complementary metal-oxide-semiconductor (CMOS) reaching physical limits. Conventional Ohmic contact techniques, however, have hindered rather than helped the development of CMOS technology reaching its limits of scaling. Here, a novel conductive filament metal-interlayer-semiconductor (CF-MIS) contact-which achieves ultralow contact resistance by generating CFs and lowering Schottky barrier height (SBH)-is investigated for potential applications in various nanodevices in lieu of conventional Ohmic contacts. This universal and innovative technique, CF-MIS contact, forming the CFs to provide a quantity of electron paths as well as tuning SBH of semiconductor is first introduced. The proposed CF-MIS contact achieves ultralow specific contact resistivity, exhibiting up to ∼×700 000 reduction compared to that of the conventional metal-semiconductor contact. This study proves the viability of CF-MIS contacts for future Ohmic contact schemes and that they can easily be extended to mainstream electronic nanodevices that suffer from significant contact resistance problems.

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Formation of Low-Resistivity Nickel Germanide Using Atomic Layer Deposited Nickel Thin Film

Cited by 14 publications

References 18 publications

Nickel Germanide Thin Films by Atomic Layer Deposition

Nickel Germanide Thin Films by Atomic Layer Deposition

Comprehensive n- and pMOSFET Channel Material Benchmarking and Analysis of CMOS Performance Metrics Considering Quantum Transport and Carrier Scattering Effects

Novel Conductive Filament Metal–Interlayer–Semiconductor Contact Structure for Ultralow Contact Resistance Achievement

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