Formation of c-BN thin films under reduced ion impact

Hahn, J.; Richter, Frank; Pintaske, R.; Röder, M.; Schneider, E.; Welzel, Th.

doi:10.1016/s0257-8972(96)03178-7

Cited by 63 publications

(15 citation statements)

References 8 publications

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“…Recently, several groups have been investigating whether or not the same stabilization mechanism is valid for films deposited using sputtering techniques. [3][4][5] In sputter deposition of cBN, the energetic bombardment is accomplished by negatively biasing a substrate which is in contact with a high-density plasma. The negative bias voltage controls the energy and, consequently, the momentum per arriving boron atom of the energetic particles bombarding the growing film.…”

Section: Pressure Dependence Of the Negative Bias Voltage For Stabilimentioning

confidence: 99%

Pressure dependence of the negative bias voltage for stabilization of cubic boron nitride thin films deposited by sputtering

Otaño-Rivera

Pilione

Messier

1998

Applied Physics Letters

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Articles you may be interested inSemiconducting properties of zinc-doped cubic boron nitride thin films Characterization of cubic boron nitride growth using UV-extended real-time spectroscopic ellipsometry: Effect of plasma additions and dynamic substrate bias steps Cubic boron nitride thin film deposition by unbalanced magnetron sputtering and dc pulsed substrate biasing Growth mechanism of cubic boron nitride thin films by ion beam assist sputter deposition

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Section: Pressure Dependence Of the Negative Bias Voltage For Stabilimentioning

confidence: 99%

Pressure dependence of the negative bias voltage for stabilization of cubic boron nitride thin films deposited by sputtering

Otaño-Rivera

Pilione

Messier

1998

Applied Physics Letters

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“…1-3 Sometimes, a possible relation with the momentum flux was investigated. 4,5 However, in case of sputtering oxides, sulfides, or reactive magnetron sputtering in electronegative gasses in general, the growing film can be bombarded with high energy negative ions. 6 These high energy negative ions are created at the target surface and accelerated over the discharge voltage towards the substrate or chamber walls.…”

Section: Introductionmentioning

confidence: 99%

Modeling the flux of high energy negative ions during reactive magnetron sputtering

Mahieu

Leroy

Aeken

et al. 2009

Journal of Applied Physics

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Articles you may be interested inInvestigation of ionized metal flux in enhanced high power impulse magnetron sputtering discharges J. Appl. Phys. 115, 153301 (2014); 10.1063/1.4871635 Current-voltage-time characteristics of the reactive Ar/O2 high power impulse magnetron sputtering dischargeThe negative ion flux during reactive sputtering from planar and rotating cylindrical magnetrons has been studied. Energy resolved mass spectrometry was used to measure the energy and mass distribution of the negative ions. Also the angular distribution of the high energy ions was characterized for planar as well as for rotating cylindrical magnetrons. Besides these measurements, a binary collision Monte Carlo simulation code, SiMTRA, was adapted in order to simulate the energy, mass, and angular distribution of the high energy negative ions. All simulated distributions, for both planar and rotating cylindrical magnetrons, were in excellent correspondence with the experimental observations. Also a model for the amount of high energy negative O − ions was proposed. Indeed, the logarithm of the amount of high energy negative O − ions is shown to be related to the secondary electron emission yield of the oxide target, and these two parameters are known to be related to the work function. The SiMTRA simulations, in combination with knowledge of the work function or secondary electron emission yield of the target, allow modeling the flux of high energy negative ions during reactive magnetron sputtering.

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“…We believe that because the c-BN growth continues after a certain initial c-BN layer has been formed, the c-BN films grow epitaxially afterwards. 8 The lower substrate …”

Section: Resultsmentioning

confidence: 99%

“…8 In the present paper, we describe how we have successfully prepared BN films by magnetron sputtering under different ion bombardment conditions. Fourier transform infrared spectroscopy (FTIR) and x-ray photoelectron spectroscopy Ł Correspondence to: Liudi Jiang, Department of Electronics and Electrical Engineering, Scottish Microelectronics Centre, The University of Edinburgh, King's Buildings, Westmains Rd.…”

Section: Introductionmentioning

confidence: 99%

Formation of cubic boron nitride films by r.f. magnetron sputtering

Jiang

Fitzgerald

Rose

et al. 2002

Surface & Interface Analysis

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Boron nitride thin films have been deposited on silicon by tuned substrate r.f. magnetron sputtering from a sintered hexagonal BN target using a mixture of Ar (90%) and N 2 (10%) as sputtering gas at different substrate bias conditions. The deposited films have been characterized by Fourier transform infrared spectroscopy (FTIR) and x-ray photoelectron spectroscopy (XPS). Both FTIR and XPS results show that the formation of nearly pure cubic boron nitride films were achieved when the films were deposited by a two-step process at a lower substrate bias voltage after the initial formation of the cubic boron nitride layer. Also, as indicated by FTIR measurements, this two-step process caused a reduction of the residual stress in the deposited films and no re-sputtering effects were present during the cubic BN growing process.

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Formation of c-BN thin films under reduced ion impact

Cited by 63 publications

References 8 publications

Pressure dependence of the negative bias voltage for stabilization of cubic boron nitride thin films deposited by sputtering

Pressure dependence of the negative bias voltage for stabilization of cubic boron nitride thin films deposited by sputtering

Modeling the flux of high energy negative ions during reactive magnetron sputtering

Formation of cubic boron nitride films by r.f. magnetron sputtering

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