Abstract:With the extended applications of hexagonal silicon carbide (h-SiC) in the various fields, particularly in the application of the electronic devices, more and more attentions have been focused on the micro structures as well as their physical properties of h-SiC surface. In this study, we have performed the first principal calculations to compare the formation energies of four typical defects (Vc, Vsi, CI and SiI) on the 4H-SiC (0001) surface as well as in the interior layers. Due to the surface reconstruction… Show more
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