The initial oxidation of the 4H-SiC (0001) surface with C-related point defects: Insight by first-principles calculations

Wei, Shengsheng; Yin, Zhipeng; Bai, Jiao; Xie, Weiwei; Qin, Fuwen; Su, Yan; Wang, Dejun

doi:10.1016/j.apsusc.2022.156161

Cited by 2 publications

(6 citation statements)

References 62 publications

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“…Figure c shows the optimized structures of these reactions and the corresponding γ obtained by eq . The lower the γ, the more stable the structure. , The relatively low γ values of reactions (vi) (−35.21 eV/nm 2 ) and (viii) (−35.13 eV/nm 2 ) validate the N atom is likely to diffuse to the SiO 2 /SiC interface, which is consistent with the result of SIMS depth profiles that the N atoms accumulate at the interface after NH plasma pretreatment.…”

Section: Resultssupporting

confidence: 76%

“…Due to the content of C in Figure being shown in atomic percentage, we consider the relative content of C here. The C relative contents in the samples after NH pretreatment are significantly reduced, which are directly relevant to the reduction of C-related defects/pollutants on the SiC surface after NH surface pretreatment; surface C-related defects have been proved to be one of the sources of interfacial C-cluster defects during SiC thermal oxidation . In addition, interfacial C-related defects generally exist in MOS devices as electrically active electron or hole traps; the suppression of C-related defects is beneficial to improving the V fb stability.…”

Section: Resultsmentioning

confidence: 99%

“…The lower the γ, the more stable the structure. 18,31 The 12,48 Compared with the sample of NH-0 min, the samples with NH plasma pretreatment have a lower peak intensity of SiO x C y , demonstrating that the SiO x C y defects are decreased. This is associated with the short O diffusion distance limiting the additional oxidation of SiC and the elimination of SiO x C y defects by N atoms.…”

Section: Role Of H and N Atomsmentioning

confidence: 99%

“…These typical defects are considered one of the sources of interface defects during thermal oxidation. 1,18,47 The formation energies of the H-and N-passivated C Si , V C , and V Si are −1.95, −2.61, and −1.67 eV (Table 1), respectively. These negative formation energies demonstrate that the passivating reactions S5.…”

Section: Role Of H and N Atomsmentioning

confidence: 99%

“…Less attention has been placed on the pretreatment of SiC prior to thermal oxidation-formed SiO 2 gate dielectric. Indeed, the existence of initial surface defects (i.e., dangling bonds, C- or O-contaminants and adsorbates, C-related point defects) is also one of the main reasons for the poor quality of the SiC/SiO 2 interface. − Several publications have reported the methods to improve the SiC surface characteristics, involving hydrogen/nitrogen plasma treatment, , direct atomic source nitridation treatment, and ultraviolet ozone treatment . Iwasaki et al revealed that NH 3 plasma pretreatment significantly decreased D it due to the passivation of the interface traps by nitrogen and the termination of dangling bonds by hydrogen .…”

Section: Introductionmentioning

confidence: 99%

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Reliability and Stability Improvement of MOS Capacitors via Nitrogen–Hydrogen Mixed Plasma Pretreatment for SiC Surfaces

Wei

Bai

Xie

et al. 2023

ACS Appl. Mater. Interfaces

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We investigated the effect of nitrogen–hydrogen (NH) mixed plasma pretreatment of 4H–SiC surfaces on SiC surface properties, SiO2/SiC interface quality, and the reliability and voltage stability of metal–oxide–semiconductor (MOS) capacitors. The NH plasma pretreatment decreased the incomplete oxide and contaminants on the SiC surface and reduced the density of SiO2/SiC interface traps. Compared with the untreated sample, the dielectric insulating characteristics and reliability of samples pretreated by NH plasma were improved. We also demonstrated that the shift/hysteresis of the flat band voltage (V fb) and the midgap voltage (V mg) induced by bias temperature stress for SiC MOS capacitors after NH plasma pretreatment was significantly decreased. Furthermore, the mechanisms of NH plasma pretreatment to improve interface properties and device performances were determined by combining secondary ion mass spectrometry (SIMS) measurements, X-ray photoelectron spectroscopy (XPS), and first-principles calculations. The result indicates that the excessive oxidation at the SiO2/SiC interface was limited due to the reduction in the diffusion of oxygen atoms into SiC caused by the surface Si–H and Si–N; NH plasma pretreatment suppressed the generation of interfacial traps by reducing surface pollutants and passivating surface defects, and some N atoms introduced into the SiO2/SiC interface effectively passivated the interfacial electroactive traps.

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Section: Resultssupporting

confidence: 76%

Section: Resultsmentioning

confidence: 99%

Section: Role Of H and N Atomsmentioning

confidence: 99%

Section: Role Of H and N Atomsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Reliability and Stability Improvement of MOS Capacitors via Nitrogen–Hydrogen Mixed Plasma Pretreatment for SiC Surfaces

Wei

Bai

Xie

et al. 2023

ACS Appl. Mater. Interfaces

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A Review of Wide Bandgap Semiconductors: Insights into SiC, IGZO, and Their Defect Characteristics

Shangguan,

Lv,

Jiang

2024

Nanomaterials

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Although the irreplaceable position of silicon (Si) semiconductor materials in the field of information has become a consensus, new materials continue to be sought to expand the application range of semiconductor devices. Among them, research on wide bandgap semiconductors has already achieved preliminary success, and the relevant achievements have been applied in the fields of energy conversion, display, and storage. However, similar to the history of Si, the immature material grown and device manufacturing processes at the current stage seriously hinder the popularization of wide bandgap semiconductor-based applications, and one of the crucial issues behind this is the defect problem. Here, we take amorphous indium gallium zinc oxide (a-IGZO) and 4H silicon carbide (4H-SiC) as two representatives to discuss physical/mechanical properties, electrical performance, and stability from the perspective of defects. Relevant experimental and theoretical works on defect formation, evolution, and annihilation are summarized, and the impacts on carrier transport behaviors are highlighted. State-of-the-art applications using the two materials are also briefly reviewed. This review aims to assist researchers in elucidating the complex impacts of defects on electrical behaviors of wide bandgap semiconductors, enabling them to make judgments on potential defect issues that may arise in their own processes. It aims to contribute to the effort of using various post-treatment methods to control defect behaviors and achieve the desired material and device performance.

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The initial oxidation of the 4H-SiC (0001) surface with C-related point defects: Insight by first-principles calculations

Cited by 2 publications

References 62 publications

Reliability and Stability Improvement of MOS Capacitors via Nitrogen–Hydrogen Mixed Plasma Pretreatment for SiC Surfaces

Reliability and Stability Improvement of MOS Capacitors via Nitrogen–Hydrogen Mixed Plasma Pretreatment for SiC Surfaces

A Review of Wide Bandgap Semiconductors: Insights into SiC, IGZO, and Their Defect Characteristics

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