The structural and electronic properties of Carbon-related point defects on 4H-SiC (0001) surface

Wei, Shengsheng; Yin, Zhipeng; Bai, Jiao; Xie, Weiwei; Qin, Fuwen; Su, Yan; Wang, Dejun

doi:10.1016/j.apsusc.2022.152461

Cited by 10 publications

(2 citation statements)

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“…Figure a–c shows the stable optimized structures of the typical antisite defect ( C Si ), C vacancy defect ( V C ), and Si vacancy defect ( V Si ) on the SiC surface after passivation by H and N atoms. These typical defects are considered one of the sources of interface defects during thermal oxidation. ,, The formation energies of the H- and N-passivated C Si , V C , and V Si are −1.95, −2.61, and −1.67 eV (Table ), respectively. These negative formation energies demonstrate that the passivating reactions of H and N to these defects are likely to occur.…”

Section: Resultsmentioning

confidence: 99%

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Reliability and Stability Improvement of MOS Capacitors via Nitrogen–Hydrogen Mixed Plasma Pretreatment for SiC Surfaces

Wei

Bai

Xie

et al. 2023

ACS Appl. Mater. Interfaces

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We investigated the effect of nitrogen–hydrogen (NH) mixed plasma pretreatment of 4H–SiC surfaces on SiC surface properties, SiO2/SiC interface quality, and the reliability and voltage stability of metal–oxide–semiconductor (MOS) capacitors. The NH plasma pretreatment decreased the incomplete oxide and contaminants on the SiC surface and reduced the density of SiO2/SiC interface traps. Compared with the untreated sample, the dielectric insulating characteristics and reliability of samples pretreated by NH plasma were improved. We also demonstrated that the shift/hysteresis of the flat band voltage (V fb) and the midgap voltage (V mg) induced by bias temperature stress for SiC MOS capacitors after NH plasma pretreatment was significantly decreased. Furthermore, the mechanisms of NH plasma pretreatment to improve interface properties and device performances were determined by combining secondary ion mass spectrometry (SIMS) measurements, X-ray photoelectron spectroscopy (XPS), and first-principles calculations. The result indicates that the excessive oxidation at the SiO2/SiC interface was limited due to the reduction in the diffusion of oxygen atoms into SiC caused by the surface Si–H and Si–N; NH plasma pretreatment suppressed the generation of interfacial traps by reducing surface pollutants and passivating surface defects, and some N atoms introduced into the SiO2/SiC interface effectively passivated the interfacial electroactive traps.

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Section: Resultsmentioning

confidence: 99%

“…These typical defects are considered one of the sources of interface defects during thermal oxidation. 1,18,47 The formation energies of the H-and N-passivated C Si , V C , and V Si are −1.95, −2.61, and −1.67 eV (Table 1), respectively. These negative formation energies demonstrate that the passivating reactions S5.…”

Section: Role Of H and N Atomsmentioning

confidence: 99%