Formation mechanism of rotational twins in beam-induced lateral epitaxy on (1 1 1)B GaAs substrate

Structure ofGaAs(1¯1¯1¯)under Ga-rich cond

“…Interestingly, the faults become less prevalent in films grown under the Garich conditions that stabilize the ͱ 19ϫ ͱ 19 reconstruction. [13][14][15] A similar trend is found for the initial structures of GaAs nanowires grown by using masks ͑selective-area growth͒. 16 The reconstruction may thus be a key to controlling stacking faults in GaAs films and nanowires.…”

“…This is qualitatively consistent with the experimentally observed trends. [13][14][15][16] Although this simple argument neglects detailed growth processes and the distinction between nanowires and films, it illustrates how the reconstruction may suppress stacking faults in GaAs.…”