Microchannel epitaxy

Naritsuka, Shigeya

doi:10.1016/j.pcrysgrow.2016.04.016

Cited by 5 publications

(3 citation statements)

References 27 publications

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“…for example, utilizes in-situ periodic temperature cycles (figure 5(a)). The oscillating temperature range encompasses the III-V growth temperature, thus inducing different strain signs and magnitudes in the III-V thin films due to the different thermal expansion coefficients between III-V and [39,40], (c) conformal growth [41], and (d) corrugated epitaxial lateral overgrowth (CELOG) [42]. (e) Tilted SEM and (f) cross-sectional TEM of InP grown on Si using CELOG.…”

Section: Dislocation Engineering Of Iii-v Templates Grown On Simentioning

confidence: 99%

“…This includes techniques such as epitaxial lateral overgrowth (ELOG), depicted in figure 6, and the bufferless III-V growth on Si which will be discussed in section 4. In ELOG, beginning with a III-V template grown on Si (figure 6(a)), a SiO 2 pattern is defined on the III-V surface for subsequent III-V regrowth [39,40]. This setup effectively blocks TDs located right underneath the SiO 2 growth mask.…”

Section: Dislocation Engineering Of Iii-v Templates Grown On Simentioning

confidence: 99%

“…Figure 6. Schematic showing the (b) lateral overgrowth on III-V thin films[39,40], (c) conformal growth[41], and (d) corrugated epitaxial lateral overgrowth (CELOG)[42]. (e) Tilted SEM and (f) cross-sectional TEM of InP grown on Si using CELOG.…”

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confidence: 99%

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Recent progress in epitaxial growth of dislocation tolerant and dislocation free III–V lasers on silicon

Yan,

2024

J. Phys. D: Appl. Phys.

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Epitaxial integration of III–V optical functionalities on silicon (Si) is the key to complement current Si photonics, facilitating the development of scalable, compact photonic integrated circuits. Here we aim to outline this field, focusing on the III–V semiconductor materials and the III–V lasers grown on Si. This paper is divided into two main parts: in the first part, we discuss III–V materials grown on Si, including the low-index {hhl} facets, (001) Si surface and anti-phase boundary, and dislocation engineering. The second part centres at III–V lasers grown on Si: we will first discuss III–V lasers that are highly tolerant to dislocations, including quantum dot/dash diode lasers, interband cascade, and quantum cascade lasers grown on Si from near infrared to long-wave infrared. We then move to the selective heteroepitaxy of low dislocation density III–Vs for the bufferless lasers. Finally, we review the III–V nanowire photonic crystal lasers grown on Si, which offers a different approach to overcome material mismatch and grow dislocation free III–V structures on silicon. We start with briefly introducing the recent progress of each technology, followed with a discussion of its key advantages, research challenge and opportunities.

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