Formation kinetics and structure of Pd2Si films on Si

Bower, R.W.; Sigurd, D.; Scott, R. E.

doi:10.1016/0038-1101(73)90063-4

Cited by 116 publications

(21 citation statements)

References 19 publications

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“…During this post-processing step we also worked to ensure that the formation of a palladium-silicon silicide (Pd 2 Si) will not take place by maintaining the sample's surroundings during the deposition process at approximately ∼100 • C, keeping the deposition time short and eliminating any post-deposition annealing steps. We further expect the formation of a silicide to be hindered the presence of the native oxide on the nanowires' surface [14,15]. The electrical properties of the NEMS were also evaluated following the global deposition process.…”

Section: Resultsmentioning

confidence: 99%

Post-processing techniques for locally self-assembled silicon nanowires

Englander

Christensen

Kim

et al. 2007

Sensors and Actuators A: Physical

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Section: Resultsmentioning

confidence: 99%

Post-processing techniques for locally self-assembled silicon nanowires

Englander

Christensen

Kim

et al. 2007

Sensors and Actuators A: Physical

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“…No data have been found in the literature concerning K r . Bower et al 6 found K d = 39 exp͑−1.5 eV/ k B T͒ cm 2 s −1 for 20-400 nm thick Pd layers using RBS.…”

mentioning

confidence: 98%

“…5,6 Figure 1 presents the intensity variation versus time ͑t͒ of the Pd͑111͒ and of the Pd 2 Si͑002͒ diffracted peaks during annealing at 185°C. At the beginning of the experiment, only the Pd layer is detected.…”

mentioning

confidence: 99%

Differential scanning calorimetry measurements of kinetic factors involved in salicide process

Hoummada

Portavoce

Perrin-Pellegrino

et al. 2008

Applied Physics Letters

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Experimental procedure allowing the measurement of kinetic factors controlling the reaction of a nanometric film with a monocrystalline substrate by differential scanning calorimetry (DSC) is described. This technique is shown to be of great interest for characterization of silicide formation during microelectronic industrial processes. Combining both in situ x-ray diffraction measurements (crystal structure) and DSC measurements (formation enthalpy), the interface reaction coefficient Kr and the effective diffusion coefficient Kd characterizing Pd2Si growth have been measured.

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“…Pd 2 Si begins forming after annealing at temperatures of 250°C and greater [26][27][28]. Chen and Chen [28] found that over a temperature range of 250-800°C, epitaxial Pd 2 Si formed on Si wafers, and in the temperature range of 850-1,000°C PdSi begins forming.…”

Section: Pd-sinw Solid-state Reactionsmentioning

confidence: 99%

Silicide formation in contacts to Si nanowires

2012

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Silicides, intermetallic compounds formed by the reaction of a metal and Si, have long been used as contacts for metal oxide semiconductor (CMOS) transistors and have more become interesting for other Si nanowire (SiNW) devices. In the following, experimental results for the Ti, V, Pt, Pd, Fe, and Ni-Si systems are reported and placed in the context of prior work on silicide formation from metal films on Si wafers. For the early transition metals Ti and V, the silicide is formed only underneath the contact pad and is Si-rich (MSi 2 ). For the middle transition metal Fe and late transition metals Pt and Pd, a metal-rich silicide was the first phase observed to form, but poor morphologies were common, making it a challenge to incorporate these contacts into nanowire devices. Nickel contacts were the only ones with well-behaved axial silicide growth away from the contact pad, and silicide formation was strongly dependent on the original SiNW orientation. These findings are discussed in terms of kinetic features of the metal-SiNW systems.

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Formation kinetics and structure of Pd2Si films on Si

Cited by 116 publications

References 19 publications

Post-processing techniques for locally self-assembled silicon nanowires

Post-processing techniques for locally self-assembled silicon nanowires

Differential scanning calorimetry measurements of kinetic factors involved in salicide process

Silicide formation in contacts to Si nanowires

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