Formation conditions and atomic structure of the Si(111)-√19 Ni surface

Parikh, S.; Lee, M. Y.; Bennett, Peter

doi:10.1016/0039-6028(96)00029-5

Cited by 32 publications

(16 citation statements)

References 15 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…4 R ×°and (1 1) RC × − phases [13][14][15][16][17]. The last two phases are the most likely intermediate steps to epitaxial growth of 3D NiSi 2 onto Si (111) [18,19,20]. On Si (001), depending on the Ni coverage and thermal annealing conditions, several nickel-silicide compounds can be formed [22].…”

Section: Introductionmentioning

confidence: 99%

Formation and stability of a two-dimensional nickel silicide on Ni(111): An Auger, LEED, STM, and high-resolution photoemission study

et al. 2012

View full text Add to dashboard Cite

Using low energy electron diffraction (LEED), Auger electron spectroscopy (AES), scanning tunnelling microscopy (STM) and high resolution photo-electron spectroscopy (HR-PES) techniques we have studied the annealing effect of one silicon monolayer deposited at room temperature onto a Ni (111) substrate.The variations of the Si surface concentration, recorded by AES at 300°C and 400°C, show at the beginning a rapid Si decreasing followed by a slowing down up to a plateau equivalent to about 1/3 silicon monolayer.STM images and LEED patterns, both recorded at room temperature just after annealing, reveal the formation of an ordered hexagonal superstructure ( 3 3) 30 R ×°-type. From these observations and from a quantitative analysis of HR-PES data, recorded before and after annealing, we propose that the ( 3 3) 30 R ×°superstructure corresponds to a two dimensional (2D) Ni 2 Si surface silicide.

show abstract

Section: Introductionmentioning

confidence: 99%

Formation and stability of a two-dimensional nickel silicide on Ni(111): An Auger, LEED, STM, and high-resolution photoemission study

et al. 2012

View full text Add to dashboard Cite

show abstract

“…Af ter annea l i ng at 8 reconstruc ti on was devel oped l ocal l y on the cost of 1 È 1 -RC one. In our exp eri ment sil i cide i slands were not vi sibl e at very l ow covera ges, pro babl y because the cool ing ra te of ab out 2 0 £ C/ s was to o fa st [4,8]. STS was empl oyed to del i ver inf orm ati on about density of electro ni c states of the observed f orm atio ns.…”

Section: R Esu L T S An D Discussionmentioning

confidence: 65%

“…However thi s i nterpreta ti on seems to b e i nconsistent wi th the mo del of p 1 9 È p 1 9 uni t cell structure [4]. The p eak at +0 .8 eV corresp onds to the bi ndi ng energy of the Ni Si2 .…”

mentioning

confidence: 76%

“…The p ost-dep ositi on anneal i ng at 4 (Fi g. 2c). We observed dom ai ns tha t are twi n-rel a ted to each other wi th the ang l e of ab out 1 3 £ b etween them as i t was pro po sed by Ki no da et al [1].…”

Section: R Esu L T S An D Discussionmentioning

confidence: 99%

“…Pa ri kh et al . [4] rep orted tha t coverage of about 0.08 ML of Ni f ol lowed by anneal i ng at 8 6 0 £ C resul ted i n tri ang ul ar dom ai ns of ri ng clusters, so-cal l ed 1 È 1 -RC pha se [10,11], a ccom pani ed by clean Si(1 11)-( 7 È 7 ) surf ace. The dep ositi on of 0.2 ML at 5 5 0 £ C pro duced a well -ordered p 1 9 È p 1 9 structure.…”

Section: St M /S Ts I N V Est I Gati On S Of Su Rfa Cementioning

confidence: 99%

See 2 more Smart Citations