Formation and characterization of holmium oxide on germanium‐based metal‐oxide‐semiconductor capacitor

Abstract

The influence of different thermal oxidation/nitridation durations (5,10,15, and 20 minutes) at 400 C for transforming metallic Ho sputtered on Ge substrate in N 2 O gas ambient have been systemically investigated to develop Ho 2 O 3 /Ge based on metal-oxide-semiconductor (MOS) device. The structural and chemical properties of the film were characterized using X-ray diffraction spectroscopy, X-ray photoelectron spectroscopy (XPS), and high-resolution transmission electron microscopy. Cubic-Ho 2 O 3 dielectric layer has been formed along with sandwiched interfacial layer (IL) between substrate Ge and high-k interface comprising tetragonal-GeO 2 , GeO x , and cubic-Ge 3 N 4 compounds. Energy band alignment for Ho 2 O 3 /IL/Ge MOS stack has been determined from XPS spectrum where 10-minute sample exhibited maximum conduction band offset, ΔE c~2 .47 eV and valance band offset, ΔE v~4 .67 eV, inducing lower leakage current density, J~10 −5 A cm −2 at the higher electrical breakdown, E BD~8 .59 MV cm −1 . The electrical results of this sample also rev-

Emulation of Pavlovian conditioning and pattern recognition through fully connected neural networks using Holmium oxide (Ho2O3) based synaptic RRAM device

“…Figure 1(a) depicts the GIXRD pattern for Ho 2 O 3 thin film. It is clear from the figure that the major diffraction peaks of Ho 2 O 3 film are at 2θ = 28.85°(222), 33.59°(400), and 48.24°(440) respectively, which are consistent with the reported 2θ values of Ho 2 O 3 [28][29][30]. In addition to Ho 2 O 3 peaks, we do observe peaks pertinent to FTO at 2θ = 26.38°(110), 37.59°(200), 51.38°(211), 54.47°(220), 61.43°(310), 65.39°(301), 78.23°(321) respectively [31].…”

“…Paivasaari et al [26] have demonstrated the electrical characteristics and physical properties of Ho 2 O 3 thin film grown onto silicon (100) substrate. Tung et al have reported Ho 2 O 3 films with high-dielectric constant for PH sensing applications [27,28]. Ho 2 O 3 consists distinct properties apart from its paramagnetic nature, which may be useful for various technological applications.…”

Growth of metal‐organic decomposed ternary Ga x Ce y O z films by nitrogen‐infused wet oxidation for metal‐oxide‐semiconductor capacitor

“…By further enhancing the wet oxidation temperature to 1000 C, a reduction in at% of nitrogen (2.25 at%) in the Ga x Ce y O z thin film could be possibly related to the aggressiveness of the wet oxidation process, wherein the inward diffusing of oxygen and/or OH À ions have gained sufficient energy to shatter the nitrogen diffusion barrier layer and thus, the nitrogen ions would diffuse away from the Ga x Ce y O z thin film. The variation in the elemental composition of the Ga x Ce y O z thin films wet oxidised at 400 C, 600 C, 800 C, and 1000 C would influence the generation of microstrain (ε) as well as the growth of crystallize size (D) of the investigated films, which could be calculated based on Williamson-Hall (W-H) approach, as expressed via the following Equation 38,39 :…”