Focused Ion Beam Direct‐Writing

Giérak, J.

doi:10.1002/9781118557662.ch4

Cited by 6 publications

(11 citation statements)

References 42 publications

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“…Traditional photolithographic fabrication methods have started to reach fundamental limits in the size of features they can produce 1–3 and the next generation methods such as extreme ultraviolet lithography 4,5 have many lingering issues needing to be addressed to become economically viable 6,7 . Thus, alternative lithographic methods such as block copolymer (BCP) directed self-assembly (DSA) 8–13 , direct write focused ion or electron beam 14,15 , or other multistep patterning photolithography techniques 16–18 are necessary to continue the trend predicted by Gordon Moore of device density doubling every couple of years 19 . In particular, BCP DSA can be quite prone to defects 20 and poor long-range order 21,22 compared to traditional lithography, and as a result better metrology techniques for measuring the overall order need to be implemented.…”

Section: Introductionmentioning

confidence: 99%

Advancing x-ray scattering metrology using inverse genetic algorithms

Hannon

Sunday

Kline

2016

J. Micro/Nanolith. MEMS MOEMS

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We compare the speed and effectiveness of two genetic optimization algorithms to the results of statistical sampling via a Markov chain Monte Carlo algorithm to find which is the most robust method for determining real space structure in periodic gratings measured using critical dimension small angle X-ray scattering. Both a covariance matrix adaptation evolutionary strategy and differential evolution algorithm are implemented and compared using various objective functions. The algorithms and objective functions are used to minimize differences between diffraction simulations and measured diffraction data. These simulations are parameterized with an electron density model known to roughly correspond to the real space structure of our nanogratings. The study shows that for X-ray scattering data, the covariance matrix adaptation coupled with a mean-absolute error log objective function is the most efficient combination of algorithm and goodness of fit criterion for finding structures with little foreknowledge about the underlying fine scale structure features of the nanograting.

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Section: Introductionmentioning

confidence: 99%

Advancing x-ray scattering metrology using inverse genetic algorithms

Hannon

Sunday

Kline

2016

J. Micro/Nanolith. MEMS MOEMS

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“…As the binding energy of the atoms in the CsPbBr3 target sample (several eV) [20] is much smaller than the kinetic energy of Ga + ion at 30 keV, the atoms in CsPbBr3 will be readily displaced from their lattice positions by the elastic core collision resulting from energy and momentum exchanges when the Ga + ion beam is directed onto the target sample. [14,21] Moreover, the incident ions after collision and the target atoms knocked free from the lattice sites may still have enough energy to displace more target atoms, which in turn continue to dislocate yet other atoms. [14,22] As a result, a "displacement cascade" is formed upon Ga + ion irradiation, which generates plenty of defects including vacancies and interstitials, leading to the PL quenching phenomenon.…”

mentioning

confidence: 99%

Perovskite–Ion Beam Interactions: Toward Controllable Light Emission and Lasing

Wang

Gu²,

Ren

et al. 2019

ACS Appl. Mater. Interfaces

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All-inorganic cesium lead halide perovskites hold great promise for the development of next-generation optoelectronics. However, it remains unexplored how the energetic ions will impact CsPbX3, which may largely limit the application potentials. In this work, we for the first time investigate the interaction between the CsPbX3 and high-energy gallium ions in a broad range of ion doses provided by a focused ion beam (FIB) system. We found that the optical properties of CsPbX3 are highly sensitive to the energetic Ga + ions due to the relatively vulnerable ionic bonding. Specifically, even low-dose Ga + irradiation (~110 15 ions/cm 2 ) can lead to more than one-order-of-magnitude reduction in the photoluminescence (PL) intensity, whcih can be attributed to the combined effects of the formation of vacancy/interstitial defects, generation of metallic Pb-related nonradiative recombination centers and crystal-to-amorphization transition. With the increase of ion dose (~10 17 ions/cm 2 ), the morphology of CsPbX3 can be dramatically altered due to the ion sputtering effect. We demonstrate that both low-and high-dose FIB treatment can be important for realizing the application prospects of CsPbX3 in optical security protection and system-on-a-chip compatible microlasers. Our results offer significant information about the ion impacts on CsPbX3 and offer an enabling tool to manipulate the emission and lasing from CsPbX3, which could push ahead the potential of CsPbX3 in photonics and optoelectronics.

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“…На рис. 2 на врезке приведены профили изоповерхностей плотности энергии, в которых поглощается определенная доля (от 20 до 90%) всей энергии и показаны размеры зоны (8), (9). Можно отметить, что эти размеры близки к размеру профиля с 50% энергии.…”

Section: аналитическое описание распределения поглощенной энергииunclassified

“…Для этих методов характерна низкая энергетическая эффективность. При ионном распылении на разрыв связей атома с подложкой тратится 1−5 eV [7] из нескольких keV энергии иона, что означает энергетическую эффективность ∼ 10 −4 , даже для очень высоких значений коэффициента распыления ∼ 2−3 [8,9]. При использовании ионного пучка для осаждения жидких или газообразных соединений с их последующим разложением эффективность не многим выше, поскольку число распавшихся молекул прекурсора на один ион составляет от 2 до 10 [10][11][12][13].…”

Section: Introductionunclassified

Ионно-Лучевая Литография: Моделирование И Аналитическое Описание Поглощенной В Резисте Энергии

Шабельникова¹,

Зайцев²

2022

Журнал Технической Физики

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The energy deposited in resist during its exposure by ion beam was simulated for ions from a set of rare gases and for gallium. It was shown that the distribution of energy density can be approximated by the product of two Gaussian functions. One of them describes the lateral distribution of energy, the second – the dependence on depth. The widths and centres of these Gaussian functions are determined by the energy length (also mentioned in the literature as "Range" or "mean length of trajectories"), the mass of ions and the average atomic number of resist. The obtained description would make it possible to estimate the size of the resist modified volume for any type of ion with energy of tens keV. So it can be used for a priori estimates of resolution and performance, as well as for the choice of beam energy and ion type based on this.

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Focused Ion Beam Direct‐Writing

Cited by 6 publications

References 42 publications

Advancing x-ray scattering metrology using inverse genetic algorithms

Advancing x-ray scattering metrology using inverse genetic algorithms

Perovskite–Ion Beam Interactions: Toward Controllable Light Emission and Lasing

Ионно-Лучевая Литография: Моделирование И Аналитическое Описание Поглощенной В Резисте Энергии

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