Organic semiconductors that can be fabricated by simple processing techniques and possess excellent electrical performance, are key requirements in the progress of organic electronics. Both high semiconductor charge-carrier mobility, optimized through understanding and control of the semiconductor microstructure, and stability of the semiconductor to ambient electrochemical oxidative processes are required. We report on new semiconducting liquid-crystalline thieno[3,2-b ]thiophene polymers, the enhancement in charge-carrier mobility achieved through highly organized morphology from processing in the mesophase, and the effects of exposure to both ambient and low-humidity air on the performance of transistor devices. Relatively large crystalline domain sizes on the length scale of lithographically accessible channel lengths ( approximately 200 nm) were exhibited in thin films, thus offering the potential for fabrication of single-crystal polymer transistors. Good transistor stability under static storage and operation in a low-humidity air environment was demonstrated, with charge-carrier field-effect mobilities of 0.2-0.6 cm(2) V(-1) s(-1) achieved under nitrogen.

Morphological characterization has been used to explain the previously observed strong correlation between charge carrier mobility measured with thin-film transistors and the number-average molecular weight (MW) of the conjugated polymer regioregular poly(3-hexylthiophene). Atomic force microscopy and X-ray diffraction show that the low-mobility, low-MW films have a highly ordered structure composed of nanorods and the high-mobility, high-MW films have a less ordered, isotropic nodule structure. Modifying the morphology for a constant MW by changing the casting conditions or annealing the samples strongly affects the charge transport and morphology in the low-mobility, low-MW films, but has little effect on the high-MW films. In-plane grazing incidence X-ray scattering shows the in-plane π-stacking peak increases when the mobility increases for a constant MW. When the MW is changed, this correlation breaks down, confirming that in-plane π-stacking does not cause the mobility-MW relationship. We believe a combination of disordered domain boundaries and inherent effects of chain length on the electronic structure cause the mobility-MW relationship.