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1991
DOI: 10.1016/0168-583x(91)95932-4
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Fluorine and hydrogen ion irradiation in YBaCuO superconductor

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Cited by 7 publications
(5 citation statements)
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“…These results lead to the conclusion that 75 keV He + irradiation of YBCO thin films leads to defects with long-term stability at room temperature. Furthermore, it supports the assertion that beyond a certain defect density, room temperature is not high enough to provide the necessary energy for the complete healing of defects following irradiation [26,27].…”
Section: Defect Formation and Relaxation During And After He + Irradi...supporting
confidence: 70%
“…These results lead to the conclusion that 75 keV He + irradiation of YBCO thin films leads to defects with long-term stability at room temperature. Furthermore, it supports the assertion that beyond a certain defect density, room temperature is not high enough to provide the necessary energy for the complete healing of defects following irradiation [26,27].…”
Section: Defect Formation and Relaxation During And After He + Irradi...supporting
confidence: 70%
“…temperature T c of YBCO films performed ex situ after irradiation revealed also a strong increase of ρ(T) and a decrease of T c with accumulated ion dose [4]. Non-linear increase of YBCO film resistance with irradiation dose was observed also for hydrogen, fluorine and carbon ions of 200 keV energy [5].…”
Section: Methodsmentioning
confidence: 74%
“…Electronic stopping of the beam is known to cause dynamic annealing of the intrinsic defects as well as defects created during irradiation. 1 In addition, electronic energy loss also creates defects and a threshold S e of 1.5 keV/A is believed to create continuous amorphous tracks in YBCO. 7 However, many authors 8 have shown that defects can still be produced at a S e lower than the threshold value.…”
Section: Resultsmentioning
confidence: 99%
“…The S e of 0.44 keV/A in the present experiment being less than the threshold S e cannot lead to production of continuous amorphous tracks but can result in atomic size point defects. 1 Coupled with the dynamic annealing of defects, the very low concentration of defects that can result during Si ion irradiation at low fluences is expected to have different effects on the superconducting and normal state properties as compared to extended defects observed in irradiation by higher energy heavy ions like Pb, Xe and Kr. Figure 1 shows the evolution of the temperature dependence of the resistance (normalised at 100 K) characteristics of the YBCO films irradiated with 140 MeV Si ions at various fluences.…”
Section: Resultsmentioning
confidence: 99%
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