“…These results lead to the conclusion that 75 keV He + irradiation of YBCO thin films leads to defects with long-term stability at room temperature. Furthermore, it supports the assertion that beyond a certain defect density, room temperature is not high enough to provide the necessary energy for the complete healing of defects following irradiation [26,27].…”
Section: Defect Formation and Relaxation During And After He + Irradi...supporting
Thin films of the superconductor YBa2Cu3O7−δ (YBCO) were modified by low-energy light-ion irradiation employing collimated or focused He+ beams, and the long-term stability of irradiation-induced defects was investigated. For films irradiated with collimated beams, the resistance was measured in situ during and after irradiation and analyzed using a phenomenological model. The formation and stability of irradiation-induced defects are highly influenced by temperature. Thermal annealing experiments conducted in an Ar atmosphere at various temperatures demonstrated a decrease in resistivity and allowed us to determine diffusion coefficients and the activation energy ΔE=(0.31±0.03) eV for diffusive oxygen rearrangement within the YBCO unit cell basal plane. Additionally, thin YBCO films, nanostructured by focused He+-beam irradiation into vortex pinning arrays, displayed significant commensurability effects in magnetic fields. Despite the strong modulation of defect densities in these pinning arrays, oxygen diffusion during room-temperature annealing over almost six years did not compromise the signatures of vortex matching, which remained precisely at their magnetic fields predicted by the pattern geometry. Moreover, the critical current increased substantially within the entire magnetic field range after long-term storage in dry air. These findings underscore the potential of ion irradiation in tailoring the superconducting properties of thin YBCO films.
“…These results lead to the conclusion that 75 keV He + irradiation of YBCO thin films leads to defects with long-term stability at room temperature. Furthermore, it supports the assertion that beyond a certain defect density, room temperature is not high enough to provide the necessary energy for the complete healing of defects following irradiation [26,27].…”
Section: Defect Formation and Relaxation During And After He + Irradi...supporting
Thin films of the superconductor YBa2Cu3O7−δ (YBCO) were modified by low-energy light-ion irradiation employing collimated or focused He+ beams, and the long-term stability of irradiation-induced defects was investigated. For films irradiated with collimated beams, the resistance was measured in situ during and after irradiation and analyzed using a phenomenological model. The formation and stability of irradiation-induced defects are highly influenced by temperature. Thermal annealing experiments conducted in an Ar atmosphere at various temperatures demonstrated a decrease in resistivity and allowed us to determine diffusion coefficients and the activation energy ΔE=(0.31±0.03) eV for diffusive oxygen rearrangement within the YBCO unit cell basal plane. Additionally, thin YBCO films, nanostructured by focused He+-beam irradiation into vortex pinning arrays, displayed significant commensurability effects in magnetic fields. Despite the strong modulation of defect densities in these pinning arrays, oxygen diffusion during room-temperature annealing over almost six years did not compromise the signatures of vortex matching, which remained precisely at their magnetic fields predicted by the pattern geometry. Moreover, the critical current increased substantially within the entire magnetic field range after long-term storage in dry air. These findings underscore the potential of ion irradiation in tailoring the superconducting properties of thin YBCO films.
“…temperature T c of YBCO films performed ex situ after irradiation revealed also a strong increase of ρ(T) and a decrease of T c with accumulated ion dose [4]. Non-linear increase of YBCO film resistance with irradiation dose was observed also for hydrogen, fluorine and carbon ions of 200 keV energy [5].…”
“…Electronic stopping of the beam is known to cause dynamic annealing of the intrinsic defects as well as defects created during irradiation. 1 In addition, electronic energy loss also creates defects and a threshold S e of 1.5 keV/A is believed to create continuous amorphous tracks in YBCO. 7 However, many authors 8 have shown that defects can still be produced at a S e lower than the threshold value.…”
Section: Resultsmentioning
confidence: 99%
“…The S e of 0.44 keV/A in the present experiment being less than the threshold S e cannot lead to production of continuous amorphous tracks but can result in atomic size point defects. 1 Coupled with the dynamic annealing of defects, the very low concentration of defects that can result during Si ion irradiation at low fluences is expected to have different effects on the superconducting and normal state properties as compared to extended defects observed in irradiation by higher energy heavy ions like Pb, Xe and Kr. Figure 1 shows the evolution of the temperature dependence of the resistance (normalised at 100 K) characteristics of the YBCO films irradiated with 140 MeV Si ions at various fluences.…”
Section: Resultsmentioning
confidence: 99%
“…While heavy ions in this energy range produce extended columnar defects, the lighter ions in the same energy range has been shown to produce localized atomic size defects. 1 Although considerable progress has been made in identifying the larger defects clusters and their effects on superconducting properties, very little is known about the properties of individual point defects e.g. single vacancies and interstitials, or oxygen disorder.…”
On-line resistance measurement in a temperature range of 78 K to 124 K was performed on epitaxial thin films of YBCO irradiated with 140 MeV Si ions. The superconducting transition temperature (Tc), resistivity at 100 K (ρ 100 k ) and transition width (∆Tc) all show peak at a fluence of 1.5 × 10 13 ions/cm 2 . A crystallochemical analysis based on metastability induced charge and spin fluctuation due to irradiation induced oxygen disorder in the CuO chains explains the Tc enhancement in the low fluence regime. 79 Mod. Phys. Lett. B 1999.13:79-87. Downloaded from www.worldscientific.com by MONASH UNIVERSITY on 02/05/15. For personal use only.
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