1999
DOI: 10.1142/s0217984999000117
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140 MeV Si-ION IRRADIATION INDUCED Tc ENHANCEMENT IN YBCO THIN FILMS

Abstract: On-line resistance measurement in a temperature range of 78 K to 124 K was performed on epitaxial thin films of YBCO irradiated with 140 MeV Si ions. The superconducting transition temperature (Tc), resistivity at 100 K (ρ 100 k ) and transition width (∆Tc) all show peak at a fluence of 1.5 × 10 13 ions/cm 2 . A crystallochemical analysis based on metastability induced charge and spin fluctuation due to irradiation induced oxygen disorder in the CuO chains explains the Tc enhancement in the low fluence regime.… Show more

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Cited by 3 publications
(5 citation statements)
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“…This means that some concurrent mechanism, which cause an increase in T c , come into play. [32] was not, however, connected with the granular structure of the sample. 3).…”
Section: Resultsmentioning
confidence: 79%
See 3 more Smart Citations
“…This means that some concurrent mechanism, which cause an increase in T c , come into play. [32] was not, however, connected with the granular structure of the sample. 3).…”
Section: Resultsmentioning
confidence: 79%
“…Explanations of the effect in Ref. [32] was not however connected with granular structure of sample. In Ref.…”
Section: Resultsmentioning
confidence: 89%
See 2 more Smart Citations
“…The superconducting transition, which shifts to lower temperatures after irradiation at 79 K, tends to recover to the pre-irradiation value on annealing the film at 297 K. In the low-fluence regime (Fig. 3a), the T c and T c0 obtained after irradiation at the fluence of 1 Â 10 10 ions cm À2 , increased even beyond that of the pristine sample on annealing at 297 K. This unusual behaviour has also been seen in a few high temperature superconducting systems under ion irradiation [21,22] and electron irradiation [23,24]. In the high-fluence regime, the T c1 and T c2 also tend to approach their pre-irradiation values on annealing the irradiated film at 297 K (Fig.…”
Section: Annealing Characteristics Of Irradiation Induced Point Defectsmentioning
confidence: 52%