Flip-Chip Compatible Electroabsorption Modulator for up to 40 Gb/s, Integrated With 1.55 $\mu{\rm m}$ DFB Laser and Spot-Size Expander

Kreissl, J.; Bornholdt, C.; Gaertner, Tom; Moerl, L.; Przyrembel, G.; Rehbein, W.

doi:10.1109/jqe.2011.2153180

Cited by 12 publications

(6 citation statements)

References 13 publications

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“…1.55 µm is a very important wavelength for semiconductor lasers as fiber communication systems have the lowest loss at 1.55 µm [1]. In addition, 1.55 µm is in the eye safe region for laser detection and ranging applications.…”

Section: Introductionmentioning

confidence: 99%

Optimization of active region for promising uncooled continuous wave 1.55 μm high power diode laser

Hao

et al. 2012

Laser Phys. Lett.

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To achieve high characteristics temperature and high power operation of 1.55 µm diode laser, a new way, which could reduce the Auger recombination by optimizing the active region, is shown. InGaAlAs multiple quantum well (MQW) are investigated. Some important parameters, such as the number of quantum well (QW) and composition of the barriers, are optimized to reduce the Auger recombination. The strain of QW is designed with the goal of improving the temperature performance. The threshold characteristics of current and differential quantum efficiency are obtained by adjustment of ambient temperature during modeling.Material gain, cm -

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Section: Introductionmentioning

confidence: 99%

Optimization of active region for promising uncooled continuous wave 1.55 μm high power diode laser

Hao

et al. 2012

Laser Phys. Lett.

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“…The dominant back-reflection is therefore expected to be from the SOA which could be suppressed effectively by optimizing the anti-reflection (AR)-coating. For higher modulation frequencies, straightforward design changes, such as deep-etching the EAM section to reduce the junction capacitance or using semi-insulating substrates to reduce stray capacitance, could be implemented 25 . Figure 8(b) shows the measured eye diagrams of the optical output at 5 Gbit/s for a non-return-to-zero (NRZ) pseudo-random-bit-sequence (PRBS) pulse pattern with a length of 2 31 −1, with a modulation voltage of 2 V pp and a DC bias V EAM = −1.6 V. The injection current in the DFB section was 100 mA.…”

Section: Design and Fabrication Details Of The Picmentioning

confidence: 99%

Fully integrated multi-optoelectronic synthesizer for THz pumping source in wireless communications with rich backup redundancy and wide tuning range

Hou

Deng

et al. 2016

Sci Rep

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We report a monolithic photonic integrated circuit (PIC) for THz communication applications. The PIC generates up to 4 optical frequency lines which can be mixed in a separate device to generate THz radiation, and each of the optical lines can be modulated individually to encode data. Physically, the PIC comprises an array of wavelength tunable distributed feedback lasers each with its own electro-absorption modulator. The lasers are designed with a long cavity to operate with a narrow linewidth, typically <4 MHz. The light from the lasers is coupled via an multimode interference (MMI) coupler into a semiconductor optical amplifier (SOA). By appropriate selection and biasing of pairs of lasers, the optical beat signal can be tuned continuously over the range from 0.254 THz to 2.723 THz. The EAM of each channel enables signal leveling balanced between the lasers and realizing data encoding, currently at data rates up to 6.5 Gb/s. The PIC is fabricated using regrowth-free techniques, making it economic for volume applications, such for use in data centers. The PIC also has a degree of redundancy, making it suitable for applications, such as inter-satellite communications, where high reliability is mandatory.

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“…The joint EML waveguide is designed as BH structure with an almost circular symmetric modal field allowing the formation of a spot size expander. A more detailed description for the fabrication and performance of the EML is given in [8]. To make the EML compliant for integration on SOI boards, flip-chip mounting compatible pads and alignment features have been defined on the chip surface, such as stand-offs for proper vertical positioning and marks for horizontal position adjustment.…”

Section: Fabricationmentioning

confidence: 99%

Demonstration of a Hybrid Opto-Electronic Transmitter on SoI for Access Networks

Stamatiadis¹,

Mekonnen²,

Winzer

et al. 2014

IEEE Photon. Technol. Lett.

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We present a hybrid integrated transmitter comprised of an InP/InGaAsP electro-absorption modulated laser (EML) electrically driven by a BiCMOS SiGe electronic circuit on 4-µm SoI substrate. The EML includes an electro-absorption modulator integrated together with a distributed feedback laser and a spot-size expander. The modulator driver is fabricated using the SiGe BiCMOS approach with 2.5 V p-p nominal output swing. Both elements have been flip-chip mounted on a thick SoI board using 14-µm gold-tin bumps and employing a high accuracy flip-chip bonder. The photonic chip has a footprint of 7 mm 2 and consumes a power of 0.8 W. We test the device optically and electrically demonstrating error-free operation at 10 and 20 Gb/s. Index Terms-Hybrid photonic integration, silicon-oninsulator, opto-electronic devices, optical access, fiber to the home (FTTH).

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Flip-Chip Compatible Electroabsorption Modulator for up to 40 Gb/s, Integrated With 1.55 $\mu{\rm m}$ DFB Laser and Spot-Size Expander

Cited by 12 publications

References 13 publications

Optimization of active region for promising uncooled continuous wave 1.55 μm high power diode laser

Optimization of active region for promising uncooled continuous wave 1.55 μm high power diode laser

Fully integrated multi-optoelectronic synthesizer for THz pumping source in wireless communications with rich backup redundancy and wide tuning range

Demonstration of a Hybrid Opto-Electronic Transmitter on SoI for Access Networks

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