Flicker noise by random walk of electrons at the interface in nonideal Schottky diodes

Lee, J.I.; Brini, J.; Chovet, A.; Dimitriadis, C. A.

doi:10.1016/s0038-1101(99)00187-2

Cited by 29 publications

(17 citation statements)

References 10 publications

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“…Whereas the electrical characterization of 4H-SiC p + -n-n + diodes has been extensively investigated, the trap properties of these devices still have not been investigated. The low-frequency noise technique is a sensitive and powerful tool for gaining valuable information about traps in semiconductor devices, such as Schottky diodes, metal-oxide-semiconductor field effect transistors, thin-film transistors etc [9][10][11][12][13]. The aim of this work is to investigate traps in 4H-SiC p + -n-n + diodes by performing measurements of the forward current-voltage (I-V) characteristics and current noise measurements performed in the temperature range from room to liquid nitrogen temperature.…”

Section: Introductionmentioning

confidence: 99%

Electrical and low frequency noise properties of 4H‐SiC p⁺–n–n⁺ junction diodes

Arpatzanis

Tsormpatzoglou

Dimitriadis³

et al. 2006

Physica Status Solidi (a)

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The electrical and low frequency noise properties of 4H‐SiC p+–n–n+ junctions have been investigated at different temperatures. The forward current–voltage characteristics are described as the sum of a recombination current originating from carrier recombination on the sidewall of the circular mesa of the diodes and a diffusion volume current. In the current region where the recombination mechanism is dominant, the main noise sources are attributed to carrier recombination at the perimeter surface of the diode and to a generation‐recombination noise related to a local trap level. In the current region where the diffusion current becomes important, the noise originates from mobility and diffusivity fluctuations in the space charge region of the p+–n junction. Analysis of the current and noise data allowed us to determine the density of surface states and the Hooge factor, characterizing the surface and the bulk quality of the diode. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Introductionmentioning

confidence: 99%

Electrical and low frequency noise properties of 4H‐SiC p⁺–n–n⁺ junction diodes

Arpatzanis

Tsormpatzoglou

Dimitriadis³

et al. 2006

Physica Status Solidi (a)

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“…5, the noise spectral density of the 1 / f noise components S I 1/f at constant frequency ͑f =10 Hz͒ are represented in Fig. Lee et al 22 has interpreted this noise in terms of trapping at the interface states with uniform energy distribution. Different theories have been proposed for accounting for the 1 / f noise scaling with I F 2 .…”

Section: Resultsmentioning

confidence: 99%

Depth distribution of traps in Au∕n-GaAs Schottky diodes with embedded InAs quantum dots

Koutsouras

Hastas

Tassis

et al. 2005

Journal of Applied Physics

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“…For the sample SI420 grown on Si, the low temperature regime looks more complicated. Since physical models connect the flicker noise with carrier number fluctuations [8][9][10], mobility fluctuations [11,12] and the random walk of the carriers [13], further investigations are needed to identify the conduction channels and their contribution to the low frequency noise. Exhibiting the samples to magnetic fields or illuminating them could give further insight.…”

Section: Noise Measurements Of Insb Grown On Gaas and Simentioning

confidence: 99%