Flexible Non‐Volatile Ferroelectric Polymer Memory with Gate‐Controlled Multilevel Operation

Abstract

A flexible field-effect transistor with a poly(3-hexylthiophene) (P3HT) active channel and a ferroelectric poly(vinlyidene fluoride-co-trifluoro ethylene) (PVDF-TrFE) insulator exhibits gate-voltage-controllable multilevel non-volatile memory characteristics with highly reliable data retention and endurance.

Nonvolatile Ferroelectric P(VDF-TrFE) Memory Transistors Based on Inkjet-Printed Organic Semiconductor

“…The initial on/off-state current ratio is found to be higher than 10 2 , and a ratio of more than 10 remains after the lapsed time of 10 3 seconds. The retention time value is considerably smaller than previously reported [4], [7]. Although the reason for this difference in value is not clear at present, in general, the retention characteristics of programmed currents for this type of memory transistor are very sensitive to the read-out conditions of V G .…”

“…P(VDF-TrFE) thin films can be easily formed by a solutionbased spin-coating method, and crystallization can be performed at a low temperature of around 140°C, which is one of the significant merits in realizing a memory device on plastic substrates. To this end, many studies on the fabrication and characterization of nonvolatile memory transistors using P(VDF-TrFE) have been conducted, mainly for realizing allorganic memory transistors with organic semiconducting channel layers [6], [7]. In this study, we develop a low-voltageoperating top-gated ferroelectric polymer transistor memory that can be fabricated using an inkjet-printing method [8].…”

Non-volatile organic memory with sub-millimetre bending radius

“…In particular, high-performance flexible non-volatile memories based on various data storage principles such as resistive type [5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20][21][22][23][24] , flash 4,[25][26][27][28][29] and ferroelectric [30][31][32][33][34][35][36][37][38][39][40] hold great promise in a variety of emerging applications ranging from mobile computing to information management and communication. While the recent advances in this area are impressive, novel organic materials and electronic device structures that can be tightly rolled, crumpled, stretched, sharply folded and unfolded repeatedly without any performance degradation still need to be developed.…”

Electrical characterization of poly(vinylidene fluoride-trifluoroethylene) nanocrystals embedded in porous alumina matrix

“…Composite structures based on the polymer of polyvinylidene fluoride PVDF or its copolymer of poly(vinylidene fluoride-trifluoroethylene) P(VDF-TrFE) are most promising materials for these applications. [4][5][6][7][8][9][10] P(VDF-TrFE) copolymer bulk material presents randomly oriented crystals embedded in an amorphous matrix. 11 Also, these crystals can be revealed by scanning electron microscopy (SEM) and atomic force microscopy (AFM).…”