Flexible Low‐Voltage Organic Transistors with High Thermal Stability at 250 °C

Abstract

Low-operating-voltage flexible organic thin-film transistors with high thermal stability using DPh-DNTT and SAM gate dielectrics are reported. The mobility of the transistors are decreased by 23% after heating to 250 °C for 30 min. Furthermore, flexible organic pseudo-CMOS inverter circuits, which are functional after heating to 200 °C, are demonstrated.

High-resolution spatial control of the threshold voltage of organic transistors by microcontact printing of alkyl and fluoroalkylphosphonic acid self-assembled monolayers

“…The surface of the aluminum gate electrodes was exposed to a oxygen plasma to form a 4 nm thick layer of aluminum oxide (AlO x ). The freshly grown AlO x surface is characterized by a large density of hydroxyl groups, thus providing an excellent template for the formation of high-quality phosphonic acid SAMs [15,16,27]. FC 8 -PA and HC 8 -PA SAMs were chosen for the TFTs, because in a preliminary experiment, TFTs with these two SAMs had shown better electrical performance than TFTs with FC 10 -PA and HC 10 -PA SAMs (see Fig.…”

“…The most popular method for preparing SAMs is by dipping the substrate into a liquid solution of the self-assembling molecules, which leads to the chemisorption of the molecules on the surface of the substrate and the spontaneous formation of a well-ordered monolayer [10][11][12][13][14][15][16][17][18]. A fundamental limitation of the dipping method is that it usually covers the entire substrate with the same SAM, making it difficult to create a dense pattern of more than one type of SAM on the same substrate.…”

“…The use of SAMs appears particularly promising, because of the availability of a wide range of SAMs with different properties [11,12], the reproducibility and tunability of the process [13,14], and the excellent stability of the SAMs [15,16]. Depending on the chemical structure of the SAM and the specific interactions at the interface between the SAM and the organic semiconductor, the threshold voltage of the TFTs is affected by the dipole moment of the SAM and/or by the space-charge layer induced by the SAM, so that depending on the combination of SAM and organic semiconductor, a robust, permanent and well-defined shift of the threshold voltage can be obtained [17].…”

A mechanism of the penetration limit for producing holes in poly(4-vinyl phenol) films by inkjet etching

“…Nonetheless there are technologies to further reduce inkjet nozzle sizes and thereby to bring the drop size down to a few microns, while printed transistors with channel feature sizes of several microns or even sub-micron have already been demonstrated [36][37][38][39][40][41][42]. Droplets of a smaller diameter generated with a high-resolution inkjet printer will undoubtedly diminish the maximum penetration thickness far below 5 μm and will therefore make this issue relevant to printed electronics applications.…”

1 <formula formulatype="inline"><tex Notation="TeX">$\mu$</tex></formula>m-Thickness Ultra-Flexible and High Electrode-Density Surface Electromyogram Measurement Sheet With 2 V Organic Transistors for Prosthetic Hand Control

“…In SEMS with DSA, one amplifier is shared with four EMG electrodes, which increases the electrode density fourfold. In addition, the EMG electrode array and the amplifier array are fabricated on separate sheets and the sheets are stacked [19] to further increase the electrode density.…”