Flexible low voltage nonvolatile memory transistors with pentacene channel and ferroelectric polymer

Abstract

We report on the fabrication of pentacene-based nonvolatile memory thin-film transistors (NVM-TFTs) with thin poly(vinylidene fluoride/trifluoroethylene) ferroelectric gate insulators. Our NVM-TFT adopts flexible polyethersulfone substrate and operates under the low voltage write-erase (WR-ER) pulses of ±13∼±20 V with field effect mobilities of 0.1–0.18 cm2/V s, depending on the ferroelectric polymer thickness. Our NVM-TFT displays good memory window (ΔV) of 2.5–8 V and also exhibits WR-ER current ratio of 20–40. The retention properties persist over ∼10 000 s and the dynamic response for WR-ER pulses demonstrates clear distinction of WR-ER states under the short switching pulse of 50 ms.

Ferroelectric Properties and Polarization Switching Kinetic of Poly (vinylidene fluoride-trifluoroethylene) Copolymer

“…Ferroelectric transistors can also be fabricated using P(VDF-TrFE) for each bit in FeRAM [Naber et al, 2005;Lee et al, 2009], however, the reliability still needs to be improved for future applications.…”

Strong molecular weight effects of gate-insulating memory polymers in low-voltage organic nonvolatile memory transistors with outstanding retention characteristics

“…18,19 It has been reported that TOMDs have memory functions from ferroelectric polymers, metal nanoparticles or charge trapping layers, and polymer energy well structures. [20][21][22][23][24][25][26][27][28][29][30] However, most TOMDs reported to date have limitations with respect to high operation voltages and/or poor retention (stability) characteristics, even though basic memory functions in transistor structures can be welldemonstrated. Thus, it is very important to achieve both low voltage and high retention characteristics at the same time for further consideration toward commercialization of TOMDs, particularly for mobile applications, of which the first priority is low power consumption, as well as stability.…”

Nonvolatile organic field-effect transistors fabricated on Al foil substrates

“…Nonetheless organic semiconductors can be formed at low temperatures, and most of them can be deposited by a solution process. Thus, many researchers used organic semiconductors when they fabricated FeFETs on flexible substrates [7,8,9,10].…”