Flexible high-frequency microwave inductors and capacitors integrated on a polyethylene terephthalate substrate

Sun, Lei; Qin, Guoxuan; Huang, Hai; Zhou, Han; Behdad, Nader; Zhou, Weidong; Ma, Zhenqiang

doi:10.1063/1.3280040

Cited by 79 publications

(50 citation statements)

References 10 publications

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“…A variety of colourless materials such as polyethylene 8 and polydimethylsiloxane (PDMS) 1 and coloured materials such as polyimide (or Kapton) 9 are widely used. The former can withstand only low processing temperatures (o100 1C), while the yellow-brown tinted polyimide can withstand up to B400 1C.…”

Section: Introductionmentioning

confidence: 99%

Transparent functional oxide stretchable electronics: micro-tectonics enabled high strain electrodes

et al. 2013

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Fully transparent and flexible electronic substrates that incorporate functional materials are the precursors to realising nextgeneration devices with sensing, self-powering and portable functionalities. Here, we demonstrate a universal process for transferring planar, transparent functional oxide thin films on to elastomeric polydimethylsiloxane (PDMS) substrates. This process overcomes the challenge of incorporating high-temperature-processed crystalline oxide materials with low-temperature organic substrates. The functionality of the process is demonstrated using indium tin oxide (ITO) thin films to realise fully transparent and flexible resistors. The ITO thin films on PDMS are shown to withstand uniaxial strains of 15%, enabled by microstructure tectonics. Furthermore, zinc oxide was transferred to display the versatility of this transfer process. Such a ubiquitous process for the transfer of functional thin films to elastomeric substrates will pave the way for touch sensing and energy harvesting for displays and electronics with flexible and transparent characteristics. INTRODUCTIONNovel micro-and nano-technology applications encompassing plasmonic devices, field effect transistors, light-emitting diodes, sensor networks, electromagnetic components, terahertz metamaterials, energy harvesters and displays are increasingly demonstrated on flexible substrates. 1-7 These applications represent the building blocks of future flexible and transparent device technology incorporating complex circuitry and functionality. In integrating all the applications together to realise powerful and practical technology that is fully transparent, flexible and functional, two major challenges need to be overcome.First, the flexible substrate should ideally be transparent and colourless. A variety of colourless materials such as polyethylene 8 and polydimethylsiloxane (PDMS) 1 and coloured materials such as polyimide (or Kapton) 9 are widely used. The former can withstand only low processing temperatures (o100 1C), while the yellow-brown tinted polyimide can withstand up to B400 1C. The relevance of colourless substrates to flexible device technology is highlighted by the recent research focus on this area. 10,11 Second, functional oxide materials that offer tailored properties need to be integrated. These functional oxides in the form of thin films can be transparent conductive oxides for electrical conduction, ferroelectrics for memories, piezoelectrics for energy harvesting, 12 and semiconductors or dielectrics for high-performance transistors. Almost

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Section: Introductionmentioning

confidence: 99%

Transparent functional oxide stretchable electronics: micro-tectonics enabled high strain electrodes

et al. 2013

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“…Figure 4 shows the flexible inductors and capacitors fabricated on PET and integrated with TFTs (7.8 GHz). The simulated amplifier performance is shown in Figure 4 [14]. For a 4.5-turn inductor, a resonant frequency (f res ) of 9.1 GHz was realized.…”

Section: Methodsmentioning

confidence: 99%

Transferrable single-crystal silicon nanomembranes and their application to flexible microwave systems

Seo

Yuan

Sun

et al. 2011

Journal of Information Display

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This paper summarizes the recent fabrication and characterizations of flexible high-speed radio frequency (RF) transistors, PIN-diode single-pole single-throw switches, as well as flexible inductors and capacitors, based on single-crystalline Si nanomembranes transferred on polyethylene terephthalate substrates. Flexible thin-film transistors (TFTs) on plastic substrates have reached RF operation speed with a record cut-off/maximum oscillation frequency (f T /f max ) values of 3.8/12 GHz. PIN diode switches exhibit excellent ON/OFF behaviors at high RF frequencies. Flexible inductors and capacitors compatible with high-speed TFT fabrication show resonance frequencies (f res ) up to 9.1 and 13.5 GHz, respectively. Robust mechanical characteristics were also demonstrated with these high-frequency passives components.Keywords: flexible electronics; nanomembrane; radio frequency thin-film transistors; RF switches; inductors and capacitors IntroductionTraditionally, flexible electronics are mostly based on organic or low temperature deposition compatible amorphous semiconductor (Si) materials. Devices made from these materials can only be operated at very low speed (<<1 GHz) because of the inferior carrier properties of these materials. Regardless of the low speed, these flexible electronics are suitable for applications in products such as flexible displays [1], electronic tags [2], etc. In these applications, the mechanical flexibility of electronics is of critical importance. On the other hand, a number of other applications do require the use of extremely highspeed devices (>1 GHz, the radio frequency (RF) speed), such as Wi-Fi devices, wearable radios, RF identification devices, foldable phased-array antennas, large-area radars for remote sensing, surveillance [3], etc. Nonetheless, current high-speed devices have been predominantly made of rigid chips and none of the traditional flexible active semiconductors can satisfy the requirements of high-speed applications.A promising solution toward high-speed flexible electronics has emerged with the recent development of transferrable single-crystal Si nanomembranes (SiNMs) [4][5][6][7]. By releasing high-quality flexible materials from silicon-on-insulator (SOI) and other types of substrates and transferring them to a new host substrate, high carrier mobility comparable with that of the bulk counterpart has been demonstrated [5].

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“…[1] In addition, most of the organic-organic nanocomposites are known as low-k dielectric material. Therefore, organic-inorganic nanocomposite materials [2][3][4] have attracted a lot of attention for building large-area and mechanically flexible electronic devices. These materials are also widely pursued because they offer numerous advantages in terms of ease of processing, good compatibility with a variety of substrates, and great opportunity for structural modifications.…”

Section: Introductionmentioning

confidence: 99%

Thin‐Film Composite Materials as a Dielectric Layer for Flexible Metal–Insulator–Metal Capacitors

Tiwari

Meena

et al. 2010

ChemSusChem

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A new organic-organic nanoscale composite thin-film (NCTF) dielectric has been synthesized by solution deposition of 1-bromoadamantane and triblock copolymer (Pluronic P123, BASF, EO20-PO70-EO20), in which the precursor solution has been achieved with organic additives. We have used a sol-gel process to make a metal-insulator-metal capacitor (MIM) comprising a nanoscale (10 nm-thick) thin-film on a flexible polyimide (PI) substrate at room temperature. Scanning electron microscope and atomic force microscope revealed that the deposited NCTFs were crack-free, uniform, highly resistant to moisture absorption, and well adhered on the Au-Cr/PI. The electrical properties of 1-bromoadamantane-P123 NCTF were characterized by dielectric constant, capacitance, and leakage current measurements. The 1-bromoadamantane-P123 NCTF on the PI substrate showed a low leakage current density of 5.5 x 10(-11) A cm(-2) and good capacitance of 2.4 fF at 1 MHz. In addition, the calculated dielectric constant of 1-bromoadamantane-P123 NCTF was 1.9, making them suitable candidates for use in future flexible electronic devices as a stable intermetal dielectric. The electrical insulating properties of 1-bromoadamantane-P123 NCTF have been improved due to the optimized dipole moments of the van der Waals interactions.

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Flexible high-frequency microwave inductors and capacitors integrated on a polyethylene terephthalate substrate

Cited by 79 publications

References 10 publications

Transparent functional oxide stretchable electronics: micro-tectonics enabled high strain electrodes

Transparent functional oxide stretchable electronics: micro-tectonics enabled high strain electrodes

Transferrable single-crystal silicon nanomembranes and their application to flexible microwave systems

Thin‐Film Composite Materials as a Dielectric Layer for Flexible Metal–Insulator–Metal Capacitors

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