Thin‐Film Composite Materials as a Dielectric Layer for Flexible Metal–Insulator–Metal Capacitors

Abstract

A new organic-organic nanoscale composite thin-film (NCTF) dielectric has been synthesized by solution deposition of 1-bromoadamantane and triblock copolymer (Pluronic P123, BASF, EO20-PO70-EO20), in which the precursor solution has been achieved with organic additives. We have used a sol-gel process to make a metal-insulator-metal capacitor (MIM) comprising a nanoscale (10 nm-thick) thin-film on a flexible polyimide (PI) substrate at room temperature. Scanning electron microscope and atomic force microscope revealed that the deposited NCTFs were crack-free, uniform, highly resistant to moisture absorption, and well adhered on the Au-Cr/PI. The electrical properties of 1-bromoadamantane-P123 NCTF were characterized by dielectric constant, capacitance, and leakage current measurements. The 1-bromoadamantane-P123 NCTF on the PI substrate showed a low leakage current density of 5.5 x 10(-11) A cm(-2) and good capacitance of 2.4 fF at 1 MHz. In addition, the calculated dielectric constant of 1-bromoadamantane-P123 NCTF was 1.9, making them suitable candidates for use in future flexible electronic devices as a stable intermetal dielectric. The electrical insulating properties of 1-bromoadamantane-P123 NCTF have been improved due to the optimized dipole moments of the van der Waals interactions.

High-Performance Polymer Type Capacitors

“…The fabricated sensor showed sensitivity to a relative humidity of 0.38% (RH) and a linearity R 2 (0.996) in the range of 10-90 RH%. Tiwari et al [39] fabricated organic-organic nanoscale composite thin-film (NCTF) by using a sol-gel method where the precursor solution has been achieved with organic additives using solution deposition of 1-bromoadamantane and triblock copolymer (Pluronic P123, BASF, EO 20 -PO 70 -EO 20 ). The sol-gel process was used to make metalinsulator-metal capacitor (MIM) comprising of a nanoscale (10 nm-thick) thin-film on a flexible polyimide (PI) substrate at room temperature.…”

“…Nanocomposites can provide high capacitance densities, ranging from 5 nf/inch 2 to 25 nF/inch, depending on composition, particle size, and film thickness as conductive joints for high frequency and high density interconnect applications [40].Organic-organic nanoscale composite thin-film (NCTF) dielectric by solution deposition with the sol-gel process used to make a metal-insulator-metal capacitor (MIM) [39].The low-cost flexible substrate is another research area and there are different applications for ultralow-cost RFID tags [45]. Flexible, high-κ BaTiO 3 @RGO/PI composites have promising potential applications for capacitors and electronic devices in the fields of microelectronics [62].…”

Controlled deposition of new organic ultrathin film as a gate dielectric layer for advanced flexible capacitor devices

“…However, above methods require ultrahigh vacuum condition and expensive tools. The solgel spin-coating method is a very efficient approach toward crack-free and smooth ceramic films in prior to thermal annealing limitation for plastic substrate [3,12]. In addition, such films can be fabricated at room temperature and normal pressure, obviating the need for high-vacuum systems [13].…”

Solution processable bilayered gate dielectric towards flexible organic thin film transistors

“…Recent research studies have found that high k material might lead to electrical degradation of the devices due to the undesired interaction between organic semiconductors (OSCs) and high k dielectric layer [10]. However, low k materials provide benefits of minimum Resistance-Capacitance delay (R-C), cross talk noise and power dissipation [11]. Currently, there have been an increasing demand of reducing the feature size of microelectronics but as device size is decreased Resistance-Capacitance delay increases which is a serious limitation to the scaling down dimension.…”