Flexible amorphous and microcrystalline silicon tandem solar modules in the temporary superstrate concept

Morphology control of fluorine-doped tin oxide thin films for enhanced light trapping

“…In addition to the general requirements for high conductivity and high transparency, FTO thin films are also desired to have controlled morphologies, including roughness and surface structure, for specific applications. For photovoltaic applications where FTO films are used as the front electrical contacts on thin film solar cells, a rough surface is preferred for improving light scattering [12][13][14][15] and thus energy conversion efficiency [16][17][18][19][20]. This is because such a surface would increase the light path length by reflecting and scattering the incident light at different angles, leading to an increased light trapping.…”

Translation Effects in Fluorine Doped Tin Oxide Thin Film Properties by Atmospheric Pressure Chemical Vapour Deposition

“…As evident in Table 1, improvement in the mobility (µ ) is also seen for the films. These observations i.e., increased p, reduced N, and larger µ clearly point to the known scattering mechanism at the reduced grain boundaries [27][28][29] induced by changes in growth rates or high translation speeds. On the contrary, at the higher dopant level (S1-S3) showed very little change in p however, both N and µ changed considerably at different translation rates.…”

“…As most of N are in excess of 10 20 cm −3 , the scattering processes are likely to be associated with the bulk properties of the deposited films [29]. The electrical characterization carried out at room temperature, exhibited n-type character within films.…”

“…Samples S10-S12 showed similar levels of N and µ to S7-S9 but were determined to be slightly more resistive due to the combined effects of translation speeds and dopant level. As most of N are in excess of 10 20 cm −3 , the scattering processes are likely to be associated with the bulk properties of the deposited films [29]. …”

Characterization of HF-PECVD a-Si:H thin film solar cells by using OES studies

“…Within increasing of RF power, the SiH radical intensity and deposition rate are both increased which leads to worse cell performance. The higher power intensity could cause more bombardment onto the film surface resulting in rougher or sharp morphology, and we believed that it was the reason for poor cell conversion efficiency at a higher RF power [18]. The methods for analyzing the film quality such as FT-IR or PDS are only sensible to the bulk and not to the extreme thin incubation film on the samples, whereas the OES method can insight into the transient behavior and in-situ detected the closed-chamber deposition process [19].…”