First principles investigation of physically conductive bridge filament formation of aluminum doped perovskite materials for neuromorphic memristive applications

Alsuwian, Turki; Kousar, Farhana; Rasheed, Umbreen; Imran, Muhammad; Hussain, Fayyaz; Khalil, R.M. Arif; Algadi, Hassan; Batool, Najaf; Khera, Ejaz Ahmad; Kiran, Saira; Ashiq, Muhammad Naeem

doi:10.1016/j.chaos.2021.111111

Cited by 10 publications

(6 citation statements)

References 51 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Once it reaches to an optimum electric field, the Br − vacancies line up in such an orientation to make the CFs connect both the bottom and the top electrode, which is called the completeness of the alignment of Br – vacancies filaments state in the set process (Figure 4‐ii). [ 34 ] The formation of CFs inside the perovskite switching layer transforms the device to the “On” state (LRS), by showing a sharp increase of the current. Commonly, the CFs formation is highly stable and strong enough at room temperature to break by insufficient driving force available at room temperature.…”

Section: Resultsmentioning

confidence: 99%

A Low Power‐consumption and Transient Nonvolatile Memory Based on Highly Dense All‐Inorganic Perovskite Films

Abbas

Hassan

Khan

et al. 2022

Adv Elect Materials

View full text Add to dashboard Cite

Inorganic perovskite‐based memory devices have attracted tremendous attention due to their higher level of stability, more feasible synthesis conditions and better performance, as compared to organic–inorganic hybrid perovskite‐based devices. However, better film morphology is an essential issue for the performance of these devices. Here, the all‐inorganic halide perovskite cesium lead bromide (CsPbBr3) films are successfully fabricated via a unique solution processable deposition method at ambient conditions. These films possess satisfactory surface morphology with high crystallinity. These are utilized for reproducible resistive switching layers in the gold/CsPbBr3/indium tin oxide/Glass memory applications. A series of resistive switching layers (i.e., CsPbBr3) with varied thicknesses in the range of 200–500 nm are precisely tailored. The resistive switching responses and retention properties of CsPbBr3 based‐memory devices exhibit long‐term retention (exceeding 10000 s), high on/off ratio (up to 10000), low power consumption (set voltage at 0.25V), and good reproducibility. A model for the formation of filaments in the CsPbBr3 layer is proposed to describe the resistive switching mechanism. Furthermore, the devices exhibit excellent transient behavior, which is beneficial for the security of data storage. These characteristics reveal that cesium lead halide based memristor is promising to be utilized as the next‐generation smart memory device.

show abstract

Section: Resultsmentioning

confidence: 99%

A Low Power‐consumption and Transient Nonvolatile Memory Based on Highly Dense All‐Inorganic Perovskite Films

Abbas

Hassan

Khan

et al. 2022

Adv Elect Materials

View full text Add to dashboard Cite

show abstract

“…61 Similar mechanisms were also reported for MFeO 3 (M = Gd, Nd) by substitutional doping of Al ions. 62 Wang et al 59 studied the use of intermediate phases to realize synaptic behavior using DFT calculations; they showed that the structural distortions result in a continuous change from a crystalline to an amorphous state. Unlike phasechange-material-based synapses with continuously adjustable device conductances, phase-change-material-based neurons exhibit threshold firing.…”

Section: A Metal-insulator Transitions In Quantum Materialsmentioning

confidence: 99%

Quantum materials for energy-efficient neuromorphic computing

Hoffmann,

Ramanathan,

Grollier

et al. 2022

Preprint

View full text Add to dashboard Cite

Neuromorphic computing approaches become increasingly important as we address future needs for efficiently processing massive amounts of data. The unique attributes of quantum materials can help address these needs by enabling new energy-efficient device concepts that implement neuromorphic ideas at the hardware level. In particular, strong correlations give rise to highly non-linear responses, such as conductive phase transitions that can be harnessed for short and long-term plasticity. Similarly, magnetization dynamics are strongly non-linear and can be utilized for data classification. This paper discusses select examples of these approaches, and provides a perspective for the current opportunities and challenges for assembling quantum-material-based devices for neuromorphic functionalities into larger emergent complex network systems.

show abstract

“…The doping is considered primarily as the substitutional placement of foreign atoms on lattice sites of the matrix to ensure the activation of the dopants while maintaining the original structure of the host material. The substitutional incorporation of the dopant ions is capable of changing electronic structure, catalytic activity, light absorption or transmission, luminescence, and introducing magnetic properties to the materials [ 3 ]. Doping of foreign atoms into elemental and compound hosts is carried out either during synthesis or after growth via different methods [ 4 ].…”

Section: Introductionmentioning

confidence: 99%

“…In order to computationally model the process, the placement of the dopants at lattice sites is usually simulated via first-principles methods. The rich literature in this regard points to the strategy of inserting the foreign atoms in the host followed by geometry optimization which usually relaxes the structure to settle the dopant either precisely on cationic lattice sites or in proximate locations [ 3 , 4 , 5 , 6 ]. The properties of the doped materials strongly depend upon the dopant’s location in the host due to which placement of the dopants should be carefully handled [ 7 ].…”

Section: Introductionmentioning

confidence: 99%

Ab Initio Study on Dopant Relaxation Mechanism in Ti and Ce Cationically Substituted in Wurtzite Gallium Nitride

et al. 2022

View full text Add to dashboard Cite

The changes in properties of materials upon introduction of impurities is well documented but less is known about the location of foreign atoms in different hosts. This study is carried out with the motivation to explore dopant location in hexagonal GaN using density functional theory based calculations. The dopant site location of the individual dopants Ti, Ce, and Ti-Ce codoped wurtzite GaN was investigated by placing the dopants at cationic lattice sites as well as off-cationic sites along the c-axis. The geometry optimization relaxed individual dopants on cationic Ga sites but in the case of codoping Ce settled at site 7.8% away along [0001 ¯] and Ti adjusted itself at site 14% away along [0001] from regular cationic sites. The analysis of the results indicates that optimized geometry is sensitive to the starting position of the dopants. The magnetic exchange interactions between Ti and Ce ions are responsible for their structural relaxation in the matrix.

show abstract

First principles investigation of physically conductive bridge filament formation of aluminum doped perovskite materials for neuromorphic memristive applications

Cited by 10 publications

References 51 publications

A Low Power‐consumption and Transient Nonvolatile Memory Based on Highly Dense All‐Inorganic Perovskite Films

A Low Power‐consumption and Transient Nonvolatile Memory Based on Highly Dense All‐Inorganic Perovskite Films

Quantum materials for energy-efficient neuromorphic computing

Ab Initio Study on Dopant Relaxation Mechanism in Ti and Ce Cationically Substituted in Wurtzite Gallium Nitride

Contact Info

Product

Resources

About