First-principles calculation of the effects of partial alloy disorder on the static and dynamic magnetic properties of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:msub><mml:mi>Co</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:mi>MnSi</mml:mi></mml:mrow></mml:math>

Pradines, Barthélémy; Arras, Rémi; Abdallah, Iman; Biziere, Nicolas; Calmels, L.

doi:10.1103/physrevb.95.094425

Cited by 40 publications

(39 citation statements)

References 79 publications

(132 reference statements)

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“…Typical VNA-FMR measurements performed on Co 2 MnGe (left column) and Co 2 MnSi (right column) are shown in figure 3. [38] -0.68 [56] 0.66 [56] 0 [55] Ga 5.77 5.4 100 % 4.09 [57] -0.67 [56] 0.3 [56] 0 [55] Type IV [51] 6 10 -5 [22] 100 [56] [24] [54] 0.41 [24] 0.81 [54] ~ 0.2 [24] 0.33 [54] Ge 5.75 5 5. 3 10 -4 (290 K) 6.1 10 -4 (8 K) 100 % 4,94 [51] 1.9 10 -4 [21] 100 [53] [55] 0.58 [55] 0.54 [53] 0.07 [60] 0.03 [53] Sn 6.00 5.6 9.…”

Section: -Experimental Resultsmentioning

confidence: 99%

“…Looking first the PES results obtained on Co 2 MnZ IV compounds, the observed full spin polarization for Si and Ge is consistent with theoretical calculations regarding the calculated width of the spin gap and the position of the Fermi energy in the middle of the gap. For Co 2 MnSi band structure calculations, the Fermi energy is located right in the middle of the spin gap[24,54] and a large gap is obtained (0.8 eV[54], 0.41 eV[24,55]). Our results are consistent with these theoretical predictions since the measured (half-) gap between the minority spin valence band to E F is around 0.4 eV .06 eV below the top valence band (so not HMM).…”

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confidence: 97%

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Ultralow Magnetic Damping in Co2Mn -Based Heusler Compounds: Promising Materials for Spintronics

et al. 2019

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The prediction of ultra-low magnetic damping in Co 2 MnZ Heusler half-metal thin-film magnets is explored in this study and the damping response is shown to be linked to the underlying electronic properties. By substituting the Z elements in high crystalline quality films (Co 2 MnZ with Z=Si, Ge, Sn, Al, Ga, Sb), electronic properties such as the minority spin band gap, Fermi energy position in the gap and spin polarization can be tuned and the consequence on magnetization dynamics analyzed. The experimental results allow us to directly explore the interplay of spin polarization, spin gap, Fermi energy position and the magnetic damping obtained in these films, together with ab initio calculation predictions. The ultra-low magnetic damping coefficients measured in the range 4.1 10 -4 -9 10 -4 for Co 2 MnSi, Ge, Sn, Sb are the lowest values obtained on a conductive layer and offers a clear experimental demonstration of theoretical predictions on Half-Metal Magnetic Heusler compounds and a pathway for future materials design.

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Section: -Experimental Resultsmentioning

confidence: 99%

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confidence: 97%

Ultralow Magnetic Damping in Co2Mn -Based Heusler Compounds: Promising Materials for Spintronics

et al. 2019

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“…Both terms are important and the higher they are, the higher the GMR is. Most of the research efforts focused on improving the bulk parameter, searching for electrode materials with a spin polarization at the Fermi level as high as possible (ideally of 100%), and robust with respect to the unavoidable structural defects, like permutations between atoms of different chemical species, which can damage the physical properties in the case of full-Heusler alloys [5][6][7][8][9]. The interface spin-scattering asymmetry coefficient must, however, also be improved to further increase the GMR of SVs based on half-metallic electrodes.…”

Section: Introductionmentioning

confidence: 99%

Robustness of the Half-Metallicity at the Interfaces in Co2MnSi -Based All-Full-Heusler-Alloy Spintronic Devices

2021

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Based on first-principles methods, we demonstrate that it would be possible to design efficient all-full-Heusler-alloy-based spintronic devices associating Co 2 MnSi electrodes and nonmagnetic full-Heusler-alloy spacers selected to preserve the half-metallicity of Co 2 MnSi up to the interface atomic layers. We focus on the Co 2 MnSi/Fe 2 TiSi magnetic tunnel junction, compare the stability range of its different interface terminations, and show that the half-metallicity of the Fe 2 /MnSi-terminated interface even withstands atomic intermixing. The robustness of the half-metallicity of this interface termination is also confirmed in Co 2 MnSi/Fe 2 VAl spin valves. With such interfaces, spintronic devices could possess very high magnetoresistive properties.

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“…Unfortunately, temperature, impurity, and other external factors can disrupt the completely spin-polarized band structures and further degrade the half-metallicity of ideal compounds [25][26][27][28][29][30][31][32][33][34]. For example, in the traditional full Heusler compound Co 2 MnSi, a remarkable gap with 0.4 eV in minority band at 985 K may disappear, and only a spin polarization of 61% can be observed at a barrier interface consisting of a single electrode made of a Co 2 MnSi film [35][36][37][38].…”

Section: Introductionmentioning

confidence: 99%

Half-Metallicity and Magnetism of the Quaternary Heusler Compound TiZrCoIn1−xGex from the First-Principles Calculations

Chen

Wang

et al. 2019

Applied Sciences

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The effects of doping on the electronic and magnetic properties of the quaternary Heusler alloy TiZrCoIn were investigated by first-principles calculations. Results showed that the appearance of half-metallicity and negative formation energies are associated in all of the TiZrCoIn1−xGex compounds, indicating that Ge doping at Z-site increases the stability without damaging the half-metallicity of the compounds. Formation energy gradually decreased with doping concentration, and the width of the spin-down gap increased with a change in Fermi level. TiZrCoIn0.25Ge0.75 was found to be the most stable half-metal. Its Fermi level was in the middle of the broadened gap, and a peak at the Fermi level was detected in the spin majority channel of the compound. The large gaps of the compounds were primarily dominated by the intense d-d hybridization between Ti, Zr, and Co. The substitution of In by Ge increased the number of sp valence electrons in the system and thereby enhanced RKKY exchange interaction and increased splitting. Moreover, the total spin magnetic moments of the doped compounds followed the Slater–Pauling rule of Mt = Zt − 18 and increased from 2 μB to 3 μB linearly with concentration.

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First-principles calculation of the effects of partial alloy disorder on the static and dynamic magnetic properties ofCo2MnSi

Cited by 40 publications

References 79 publications

Ultralow Magnetic Damping in Co2Mn -Based Heusler Compounds: Promising Materials for Spintronics

Ultralow Magnetic Damping in Co2Mn -Based Heusler Compounds: Promising Materials for Spintronics

Robustness of the Half-Metallicity at the Interfaces in Co2MnSi -Based All-Full-Heusler-Alloy Spintronic Devices

Half-Metallicity and Magnetism of the Quaternary Heusler Compound TiZrCoIn1−xGex from the First-Principles Calculations

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