Robustness of the Half-Metallicity at the Interfaces in 
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-Based All-Full-Heusler-Alloy Spintronic Devices

Pradines, Barthélémy; Calmels, L.; Arras, Rémi

doi:10.1103/physrevapplied.15.034009

Cited by 22 publications

(5 citation statements)

References 55 publications

(64 reference statements)

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“…While many theoretical studies on the electronic band structures and magnetic properties of all-Heusler stacks have been reported [19,[53][54][55][56][57][58][59][60][61][62][63][64], there has only been a few experimental studies [45,46,65,66]. In particular, for the emergence of unique physical properties expected theoretically, it is necessary to precisely control the structural ordering in not only the bulk region but also the interfacial region of all-Heusler stacks.…”

Section: Resultsmentioning

confidence: 99%

Epitaxial Mn2VAl films with L21-ordered structure for all-Heusler stacks

Yamada

Kudo

Sadakari

et al. 2022

Journal of Magnetism and Magnetic Materials

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Section: Resultsmentioning

confidence: 99%

Epitaxial Mn2VAl films with L21-ordered structure for all-Heusler stacks

Yamada

Kudo

Sadakari

et al. 2022

Journal of Magnetism and Magnetic Materials

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“…As in reference [50,64], the surface energy γ S of an X 2 YZ's symmetric slab with two identical surfaces S could be written as:…”

Section: Data Availability Statementmentioning

confidence: 99%

Giant magnetoresistance in spin valves realized by substituting Y-site atoms in Heusler lattice

Zhang

Jiang

et al. 2022

J. Phys.: Condens. Matter

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"All-Heusler'' spin-valve constructed by two half-metallic Heusler electrodes and a non-magnetic Heusler spacer contains two interfaces that have a crucial influence on the magnetoresistance. In order to reduce the disorder at the interface and protect the half metallicity of the electrode at the same region, we propose a scheme to construct a spin valve by replacing the Y-site atoms in the half-metallic Heusler electrode to obtain the corresponding non-magnetic spacer based on the Slater-Pauling rule. In this way, the lattice and band match of the two materials can be ensured naturally. By using Co2FeAl as electrode and Co2ScAl as the spacer materials, we construct the Co2FeAl/Co2ScAl/Co2FeAl(001)-spin valve. Based on the first-principles calculation, the most stable FeAl/CoCo-interface is determined both from the phonon spectra and the formation energy when the spacer Co2ScAl grows on the FeAl-terminated (001) surface of electrode material Co2FeAl. By comparing the projected density of states of the interfacial atoms with the corresponding density of states of the bulk electrode material, only the value of spin-up state of Al changes from 0.17 states/atom/eV to 0.06 states/atom/eV before and after substitution, the half metallicity at the interface is maintained. As a result, the spin-dependent transport properties show significant theoretical magnetoresistance MRop which can reach up to 1010% and much larger than 106% reported before.

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“…In an early study on all-Heusler alloy MTJ Co 2 CrSi/Cu 2 CrAl/Co 2 CrSi, spin-polarization of nearly 100% could be reserved in the ferromagnetic layer ( Bai et al, 2012 ). In 2021, Pradines et al (2021) studied two all-Heusler alloy MTJs, Co 2 MnSi/Fe 2 TiSi (001) and Co 2 MnSi/Fe 2 VAl (001), and showed that the half-metallicity of the Fe 2 /MnSi-terminated interface even withstands atomic intermixing. In 2022, Feng et al (2022) also studied the all-Heusler alloy MTJ CoFeTiSi/Fe 2 TiSi/CoFeTiSi system, and a high TMR ratio of 2.4 × 10 8 % was predicted.…”

Section: Introductionmentioning

confidence: 99%

First-principles study of the structure, magnetism, and electronic properties of the all-Heusler alloy Co2MnGe/CoTiMnGe(100) heterojunction

He,

Huang,

et al. 2024

Front. Chem.

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Based on first-principles calculations in the density functional theory, we systematically investigated the possible interface structure, magnetism, and electronic properties of the all-Heusler alloy Co2MnGe/CoTiMnGe(100) heterojunction. The calculation indicated that the Co2MnGe Heusler alloy is a half-metal with a magnetic moment of 4.97 μB. CoTiMnGe is a narrow-band gap semiconductor and may act as an ultra-sensitive photocatalyst. We cannot find an “ideal” spin-polarization of 100% in CoCo termination and MnGe termination. Due to the interface interaction, the direct magnetic hybridization or indirect RKKY exchange will be weakened, leading to an increase in the atomic magnetic moment of the interfacial layer. For eight possible heterojunction structures, the half-metallic gaps in the Co2MnGe bulk have been destroyed by the inevitable interface states. The spin-polarization value of 94.31% in the CoCo-TiGe-B heterojunction revealed that it is the most stable structure. It is feasible to search for high-performance magnetic tunnel junction by artificially constructing suitable all-Heusler alloy heterojunctions.

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Robustness of the Half-Metallicity at the Interfaces in Co2MnSi -Based All-Full-Heusler-Alloy Spintronic Devices

Cited by 22 publications

References 55 publications

Epitaxial Mn2VAl films with L21-ordered structure for all-Heusler stacks

Epitaxial Mn2VAl films with L21-ordered structure for all-Heusler stacks

Giant magnetoresistance in spin valves realized by substituting Y-site atoms in Heusler lattice

First-principles study of the structure, magnetism, and electronic properties of the all-Heusler alloy Co2MnGe/CoTiMnGe(100) heterojunction

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