First measurement of the in-pixel electron multiplying with a standard imaging CMOS technology: Study of the EMCMOS concept

Brugière, T.; Mayer, Fréderic; Fereyre, Pierre; Guérin, C.; Dominjon, A.; Barbier, R.

doi:10.1016/j.nima.2015.01.065

Cited by 9 publications

(4 citation statements)

References 11 publications

(10 reference statements)

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“…EBCMOS uses a thinned P-type silicon substrate as the electron multiplication layer to replace the traditional ICCD microchannel plate, uorescent screen, and coupling device [2], thus making the device size signi cantly reduced [3]. e electrons generate a large number of electron-hole pairs within the electron multiplication layer, and the obtained electron bombardment semiconductor gain noise is low [4,5], making the imaging performance of EBCMOS devices far superior to EMCCD devices [6,7]. With the advantages of small size, low power consumption, fast response, and high resolution [8], EBCMOS devices are widely used in security, biological [9,10], and medical elds [11,12].…”

Section: Introductionmentioning

confidence: 99%

Effect of Gradient Doping on Charge Collection Efficiency of EBCMOS Devices

Qin

Shi

Shi³

et al. 2022

Advances in Multimedia

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We investigated the effect of different gradient doping methods on the charge collection efficiency of the electron multiplication layer of EBCMOS devices. Exponential doping of the electron multiplication layer can form a built-in electric field in the electron multiplication layer that is favorable for photoelectron transport, so exponential doping instead of uniform doping in the electron multiplication layer of EBCMOS can effectively improve the charge collection efficiency. It is shown that exponential heavy doping on the side of the electron multiplication layer near the dead layer and exponential light doping on the side near the depletion region can improve the built-in electric field structure and increase the lifetime of the multiplied electrons, thereby improving the charge collection efficiency of EBCMOS. The optimized device achieves a charge collection efficiency of 94.48% at an incident electron energy of 4 keV, an electron beam diameter of 20 nm, a dead layer thickness of 60 nm, and a P-type silicon epitaxial layer thickness of 10 μm.

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Section: Introductionmentioning

confidence: 99%

Effect of Gradient Doping on Charge Collection Efficiency of EBCMOS Devices

Qin

Shi

Shi³

et al. 2022

Advances in Multimedia

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“…In these devices, a single photon creates a photoelectron which creates secondary electrons as it travels through the MCPs, before the electrons are converted back into photons with a phosphor screen, coupled to the CCD with by a fibre optic taper or a lens. Electron-multiplying CCDs (EMCCDs) where the signal is amplified in a gain register placed between the shift register and the output amplifier, are also single photon sensitive and commercially available, and an EMCMOS concept has been demonstrated [ 11 ].…”

Section: Introductionmentioning

confidence: 99%

Photon Counting Imaging with an Electron-Bombarded Pixel Image Sensor

Hirvonen

Suhling

2016

Sensors

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Electron-bombarded pixel image sensors, where a single photoelectron is accelerated directly into a CCD or CMOS sensor, allow wide-field imaging at extremely low light levels as they are sensitive enough to detect single photons. This technology allows the detection of up to hundreds or thousands of photon events per frame, depending on the sensor size, and photon event centroiding can be employed to recover resolution lost in the detection process. Unlike photon events from electron-multiplying sensors, the photon events from electron-bombarded sensors have a narrow, acceleration-voltage-dependent pulse height distribution. Thus a gain voltage sweep during exposure in an electron-bombarded sensor could allow photon arrival time determination from the pulse height with sub-frame exposure time resolution. We give a brief overview of our work with electron-bombarded pixel image sensor technology and recent developments in this field for single photon counting imaging, and examples of some applications.

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“…The classical physical models of elastic scattering cross section include Pendry elastic scattering cross section, Rutherford elastic scattering cross section and Mott elastic scattering cross section. Among them, the Rutherford elastic scattering cross section formula is relatively fast, while the error obtained for the solid material with high atomic number is relatively large.Since the solid material in the simulation process is a P-type silicon substrate, whose main component has a low atomic number, the Rutherford elastic scattering cross section formula can be used as a physical model for the elastic scattering cross section in the electron multiplication layer [2] .…”

Section: Figure 1 Model Of Interaction Between Electron and Electron ...mentioning

confidence: 99%

Effect of different doping methods of EBCMOS on charge collection efficiency and analysis

SHI

Qin

Shi³

et al. 2023

Conference on Infrared, Millimeter, Terahertz Waves and Applications (IMT2022)

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We investigated the effect of different gradient doping methods on the charge collection efficiency of the electron multiplication layer of Electron Bombarded CMOS (EBCMOS) devices. EBCMOS devices achieve high gain by bombarding the back side of the thinned sensor with photoelectrons.In order to improve the gain of EBCMOS devices, this paper obtains the multiplication process and scattering trajectory of electrons in the electron multiplication layer of EBCMOS from the Monte-Carlo statistical method, combined with the interaction model of low-energy electrons and Ptype silicon substrate, and finally calculates the charge collection efficiency under different doping methods.It is demonstrated experimentally that a suitable doping method can improve the charge collection efficiency of EBCMOS devices, thus improving the imaging quality. The optimized doping structure model achieves a charge collection efficiency of 94.18% at an incident electron energy of 4 KeV, an incident electron beam diameter of 20 nm, and a P-type epitaxial layer of 10 um.

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First measurement of the in-pixel electron multiplying with a standard imaging CMOS technology: Study of the EMCMOS concept

Cited by 9 publications

References 11 publications

Effect of Gradient Doping on Charge Collection Efficiency of EBCMOS Devices

Effect of Gradient Doping on Charge Collection Efficiency of EBCMOS Devices

Photon Counting Imaging with an Electron-Bombarded Pixel Image Sensor

Effect of different doping methods of EBCMOS on charge collection efficiency and analysis

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