We investigated the effect of different gradient doping methods on the charge collection efficiency of the electron multiplication layer of Electron Bombarded CMOS (EBCMOS) devices. EBCMOS devices achieve high gain by bombarding the back side of the thinned sensor with photoelectrons.In order to improve the gain of EBCMOS devices, this paper obtains the multiplication process and scattering trajectory of electrons in the electron multiplication layer of EBCMOS from the Monte-Carlo statistical method, combined with the interaction model of low-energy electrons and Ptype silicon substrate, and finally calculates the charge collection efficiency under different doping methods.It is demonstrated experimentally that a suitable doping method can improve the charge collection efficiency of EBCMOS devices, thus improving the imaging quality. The optimized doping structure model achieves a charge collection efficiency of 94.18% at an incident electron energy of 4 KeV, an incident electron beam diameter of 20 nm, and a P-type epitaxial layer of 10 um.
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